GP201MHS18 Dynex Semiconductor, GP201MHS18 Datasheet - Page 4

• Manufacturer Part Number: GP201MHS18
• Description: Low VCE(SAT) Half Bridge IGBT Module
• Manufacturer: Dynex Semiconductor

GP201MHS18
ELECTRICAL CHARACTERISTICS
T
T
case
case
4/10
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
t
t
t
t
E
E
Q
d(off)
d(on)
Q
d(off)
d(on)
OFF
t
OFF
t
t
t
ON
ON
r
f
r
f
rr
rr
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
Parameter
Parameter
I
I
F
F
R
R
= 200A, V
= 200A, V
G(ON)
G(ON)
dI
Test Conditions
dI
Test Conditions
F
F
/dt = 2000A/ s
/dt = 2500A/ s
V
V
V
V
L ~ 100nH
L ~ 100nH
= R
= R
I
GE
CE
I
GE
CE
C
C
= 200A
= 200A
= 900V
= 900V
= 15V
= 15V
G(OFF)
G(OFF)
R
R
= 50% V
= 50% V
= 4.7
= 4.7
CES
CES
,
,
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
Typ.
Typ.
600
350
130
540
100
120
500
250
450
80
90
90
70
50
Max.
Max.
800
450
200
700
130
150
110
650
350
180
600
120
100
80
Units
Units
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
C
C