STD15NF10 ST Microelectronics, STD15NF10 Datasheet - Page 3

• Manufacturer Part Number: STD15NF10
• Description: N-CHANNEL POWER MOSFET
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operatingarea
Symbo l
Symbo l
Symbo l
I
V
SDM
t
t
t
SD
I
Q
Q
d(of f)
d(of f)
d(on)
RRM
I
Q
Q
t
SD
t
t
t
t
rr
gd
c
r
gs
f
f
g
rr
( )
( )
Turn-on Delay T ime
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay T ime
Fall T ime
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(Resistive Load, see fig. 3)
V
V
R
(Resistive Load, see fig. 3)
Vclamp = 80 V
R
(Induct ive Load, see fig. 5)
I
I
V
(see test circuit, fig. 5)
SD
SD
DD
G
DD
DD
G
G
DD
= 4.7
= 4.7
= 4.7
= 15 A
= 15 A
= 50 V
= 27 V
= 80 V I
= 50 V
Test Con ditions
Test Con ditions
Test Con ditions
V
D
GS
= 15 A V
= 0
di/dt = 100 A/ s
T
j
V
GS
V
= 150
GS
GS
V
I
I
D
= 10 V
D
GS
I
D
= 12 A
= 10 V
= 12 A
= 10 V
= 15 A
= 10 V
o
C
Min.
Min.
Min.
Typ.
Typ.
Typ.
100
375
7.5
58
45
30
10
49
17
43
36
39
6
Max.
Max.
Max.
STD15NF10
1.5
15
60
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
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