STD15NF10 ST Microelectronics, STD15NF10 Datasheet

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STD15NF10

Manufacturer Part Number
STD15NF10
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Datasheet

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DESCRIPTION
This
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable
high-efficiency, high-frequency isolated DC-DC
converters
applications. It
applications with low gate drive requirements.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
April 2000
STD15NF10
Symb ol
dv/dt(
E
CHARACTERIZATION
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
I
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
SURFACE-MOUNTING DPAK (TO-252)
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
V
DM
V
V
T
P
AS
DGR
I
I
T
GS
st g
DS
D
D
tot
( )
j
(
TYPE
2
1
)
) Peak Diode Recovery voltage slope
MOSFET
LOW GATE CHARGE STripFET
as
Drain-source Voltage (V
Drain- gate Voltage (R
G ate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
T otal Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
for
DS(on)
primary
100 V
is
V
= 0.073
Telecom
DSS
series
also
N - CHANNEL 100V - 0.073 - 15A TO-252
switch
< 0.08
R
Parameter
intended for
DS( on )
c
and
GS
= 25
realized
GS
( 2) starting T
in
= 20 k )
= 0)
o
C
Computer
advanced
c
c
15 A
= 25
= 100
I
D
j
= 25
with
any
o
o
C, I
C
o
C
D
=24A , V
DD
= 50V
INTERNAL SCHEMATIC DIAGRAM
(1) I
SD
POWER MOSFET
-65 to 175
80 A, di/dt
Value
(Suffix ”T4”)
100
100
175
0.3
TO-252
15
10
60
45
75
9
DPAK
20
STD15NF10
300A/ s, V
1
PRELIMINARY DATA
3
DD
V
(BR)DSS
, T
j
W /
Unit
V/ns
mJ
o
o
W
T
V
V
V
A
A
A
C
C
JMA
o
C
1/6

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STD15NF10 Summary of contents

Page 1

... INTERNAL SCHEMATIC DIAGRAM Computer any = 100 -65 to 175 =24A , V = 50V ( STD15NF10 PRELIMINARY DATA 3 1 DPAK TO-252 (Suffix ”T4”) Value Unit 100 V 100 0 ...

Page 2

... STD15NF10 THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb T Maximum Lead Temperature F or Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbo l Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( ...

Page 3

... G GS (Induct ive Load, see fig. 5) Test Con ditions di/dt = 100 150 (see test circuit, fig. 5) STD15NF10 Min. Typ. Max. Unit Min. Typ. Max. Unit ...

Page 4

... STD15NF10 Fig Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 Fig Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... H 9.35 L2 0.8 L4 0.6 H DETAIL ”A” MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 DETAIL ”A” L4 STD15NF10 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.031 0.039 0068772-B 5/6 ...

Page 6

... STD15NF10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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