BULD50KC Power Innovations Limited, BULD50KC Datasheet - Page 3

• Manufacturer Part Number: BULD50KC
• Description: NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• Manufacturer: Power Innovations Limited

P R O D U C T
1·0
10
30
0·01
FORWARD CURRENT TRANSFER RATIO
T
V
V
V
C
CE
CE
CE
= 25°C
= 1 V
= 5 V
= 10 V
COLLECTOR CURRENT
I
C
0·1
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
1.0
0.9
0.8
0.7
0.6
1·0
0
BASE-EMITTER SATURATION VOLTAGE
I
I
TYPICAL CHARACTERISTICS
C
B
= 750 mA
= 150 mA
LDX50SHF
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
CASE TEMPERATURE
25
T
C
- Case Temperature - °C
10
Figure 3.
vs
50
0·01
1·0
0·1
10
0
INSTANTANEOUS FORWARD CURRENT
INSTANTANEOUS FORWARD VOLTAGE
T
C
75
= 25°C
V
EC
0·5
- Instantaneous Forward Voltage - V
ANTI-PARALLEL DIODE
LDX50SVB
FEBRUARY 1994 - REVISED SEPTEMBER 1997
1·0
100
Figure 2.
BULD50KC, BULD50SL
vs
1·5
2·0
2·5
LDX50SVF
3·0
3