MB84VA2002-10 Fujitsu Microelectronics, Inc., MB84VA2002-10 Datasheet - Page 27

• Manufacturer Part Number: MB84VA2002-10
• Description: 8m X 8/x 16 Flash Memory & 2m X 8 Static Ram
• Manufacturer: Fujitsu Microelectronics, Inc.

Notes: 1. In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to Vccs-0.2V or Vss
Note: Test conditions T
Parameter
• CE2s Controlled Data Retention Mode (Note 3)
HANDRING OF PACKAGE
Please handle this package carefully since the sides of packages are right angle.
CAUTION
1.)The high voltage (VID) can not apply to address pins and control pins except RESET. Therefore, it can not
use autoselect and sector protect function by applying the high voltage (VID) to specific pins.
2.)For the sector protection, since the high voltage (VID) can be applied to the RESET, it can be protected the
sector useing "Extended sector protect" command.
C
C
C
PIN CAPACITANCE
Symbol
IN
OUT
IN2
V
GND
2. When CE1s is operating at the V
3. In CE2s controlled data retention mode, input and input/output pins can be used between between
2.7 V
CC
V
V
IH
IL
s
to 0.2V during data retention mode. Other input and input/output pins can be used between -0.3V to
Vccs+0.3V.
transition of V
-0.3V to Vccs+0.3V.
CE2s
Input Capacitance
Output Capacitance
Control Pin Capacitance
Parameter Description
A
CC
= 25°C , f = 1.0 MHz
s from 3.6 to 2.2 V.
t
CDR
IH
MB84VA2002
min. level (2.2 V), the standby current is given by I
DATA RETENTION MODE
V
V
V
IN
OUT
IN
= 0
= 0
= 0
Test Setup
0.2 V
-10
T.B.D
T.B.D
T.B.D
/MB84VA2003
Typ.
t
R
T.B.D
T.B.D
T.B.D
Max.
SB1
s during the
Unit
pF
pF
pF
-10
27