MB84VA2002-10 Fujitsu Microelectronics, Inc., MB84VA2002-10 Datasheet - Page 24

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MB84VA2002-10

Manufacturer Part Number
MB84VA2002-10
Description
8m X 8/x 16 Flash Memory & 2m X 8 Static Ram
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet

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24
MB84VA2002
• Write Cycle (Note 4) (CE1s control) (SRAM)
ADDRESSES
Notes: 2. If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the
CE1s
CE2s
D
WE
D
OUT
IN
3. If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the
4. If OE is HIGH during the write cycle, the outputs will remain at high impedance.
5. Because I/O signals may be in the output state at this Time, input signals of reverse
output will remain at high impedance.
output will remain at high impedance.
polarity must not be applied.
-10
t
AS
/MB84VA2003
Note 5
t
COE
t
WC
t
ODW
t
CW
t
t
CW
WP
VALID DATA IN
t
DS
-10
t
DH
t
WR
Note 5

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