2SC5195 NEC, 2SC5195 Datasheet

no-image

2SC5195

Manufacturer Part Number
2SC5195
Description
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Manufacturer
NEC
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5195
Manufacturer:
NEC
Quantity:
45 000
Part Number:
2SC5195-T1
Manufacturer:
NEC
Quantity:
2 792
Part Number:
2SC5195-T1-A
Manufacturer:
NEC
Quantity:
20 000
Document No. P10398EJ2V0DS00 (2nd edition)
Date Published August 1995 P
Printed in Japan
(Previous No. TD-2488)
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
• Large Absolute Maximum Collector Current
• Supercompact Mini Mold Package
ORDERING INFORMATION
Remark If you require an evaluation sample, please contact an NEC
ABSOLUTE MAXIMUM RATINGS (T
PART NUMBER
2SC5195
2SC5195-T1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
NF = 1.5 dB TYP. @V
NF = 1.5 dB TYP. @V
I
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
C
= 100 mA
PARAMETER
Sales Representative. (Unit sample quantity is 50 pcs.)
In-bulk products
(50 pcs.)
Taped products
(3 Kpcs/Reel)
QUANTITY
CE
CE
NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
= 3 V, I
= 1 V, I
SYMBOL
V
V
V
Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side of
the tape.
T
P
T
CBO
CEO
EBO
I
stg
C
T
j
C
C
= 7 mA, f = 2 GHz
= 3 mA, f = 2 GHz
DATA SHEET
A
= 25 C)
PACKING STYLE
–65 to +150
RATING
100
125
150
9
6
2
UNIT
mW
mA
˚C
˚C
V
V
V
SILICON TRANSISTOR
PACKAGE DRAWINGS
2SC5195
1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
2
0.8±0.1
1.6±0.1
©
(Unit: mm)
3
1994

Related parts for 2SC5195

2SC5195 Summary of contents

Page 1

... Pin 3 (Collector) face to perforation side of the tape SYMBOL RATING UNIT CBO CEO EBO I 100 125 150 ˚ –65 to +150 ˚C stg SILICON TRANSISTOR 2SC5195 PACKAGE DRAWINGS (Unit: mm) 1.6±0.1 0.8±0 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector © 1994 ...

Page 2

... mA 2.0 GHz mA 2.0 GHz mA 2.0 GHz CE C Note 1.0 MHz CB E 350 s, Duty cycle 2 %, Pulsed 2SC5195 MIN. TYP. MAX. UNIT 100 nA 100 nA 80 160 1.7 2.5 dB 1.5 dB 4.5 5 GHz 9.5 GHz ...

Page 3

... 100 = 0.1 0 GHz 2SC5195 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.5 1 Base to Emitter Voltage V ( CURENT GAIN vs. COLLECTOR CURRENT 0 100 Collector Current I (mA) C INSERTION GAIN vs. COLLECTOR CURRENT ...

Page 4

... COLLECTOR TO BASE VOLTAGE 1.0 0.5 0 Collector to Base Voltage MAXIMUM AVAILABLE GAIN / INSERTION POWER GAIN vs. FREQUENCY 21e 0.1 0.2 NOISE FIGURE vs. FREQUENCY MHz 1.5 1.0 0.5 20 0.1 0.2 (V) 2SC5195 MAG 0 Frequency f (GHz 0 Frequency f (GHz) ...

Page 5

... S22 MAG ANG 0.989 –7.6 0.944 –17.9 0.884 –27.3 0.837 –33.3 0.785 –38.9 0.748 –40.8 0.710 –46.6 0.637 –47.7 0.604 –51.2 0.361 –52.7 0.534 –57.6 0.514 –62.6 0.492 – ...

Page 6

... S22 MAG ANG 0.914 –22.7 0.742 –43.0 0.599 –61.4 0.489 –69.5 0.404 –74.3 0.361 –75.8 0.329 –83.5 0.274 –89.3 0.242 –93.2 0.220 –95.3 0.219 –99.1 0.211 –107.3 0.192 – ...

Page 7

... S22 MAG ANG 0.804 –36.3 0.574 –63.1 0.440 –81.7 0.345 –91.1 0.273 –98.0 0.239 –100.0 0.230 –108.6 0.202 –119.4 0.181 –126.3 0.165 –129.6 0.168 –131.0 0.175 –139.3 0.167 – ...

Page 8

... S22 MAG ANG 0.976 –11.1 0.883 –24.7 0.778 –36.0 0.695 –41.4 0.621 –45.2 0.579 –45.6 0.537 –50.4 0.469 –51.0 0.434 –52.3 0.402 –52.1 0.396 –55.7 0.364 –60.4 0.342 – ...

Page 9

... S22 MAG ANG 0.939 –20.0 0.733 –39.5 0.585 –32.1 0.483 –56.7 0.406 –58.3 0.372 –57.1 0.341 –61.9 0.287 –63.3 0.256 –64.2 0.233 –62.9 0.233 –65.9 0.218 –72.5 0.198 – ...

Page 10

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 10 2SC5195 M4 94.11 ...

Related keywords