2SC5192 NEC, 2SC5192 Datasheet

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2SC5192

Manufacturer Part Number
2SC5192
Description
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Manufacturer
NEC
Datasheet

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Part Number:
2SC5192
Manufacturer:
NEC
Quantity:
20 000
Document No. P10402EJ2V0DS00 (2nd edition)
Date Published August 1995
Printed in Japan
(Previous No. TD-2485)
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
• Large Absolute Maximum Collector Current
• 4-Pin Mini Mold Package
ORDERING INFORMATION
Remark If you require an evaluation sample, please contact an NEC
ABSOLUTE MAXIMUM RATINGS (T
PART NUMBER
2SC5192-T1
2SC5192-T2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
NF = 1.5 dB TYP. @V
NF = 1.7 dB TYP. @V
I
EIAJ: SC-61
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
C
= 100 mA
PARAMETER
Sales Representative. (Unit sample quantity is 50 pcs.)
3 Kpcs/Reel
3 Kpcs/Reel
QUANTITY
CE
CE
NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
= 3 V, I
= 1 V, I
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to perforation
side of the tape.
Embossed tape 8 mm wide.
Pin 1 (Collector), Pin 2 (Emitter) face to
perforation side of the tape.
SYMBOL
V
V
V
T
P
T
CBO
CEO
EBO
I
stg
C
T
j
C
C
= 7 mA, f = 2 GHz
= 3 mA, f = 2 GHz
DATA SHEET
4 PINS MINI MOLD
A
PACKING STYLE
= 25 C)
–65 to +150
RATING
100
200
150
9
6
2
UNIT
mW
mA
˚C
˚C
V
V
V
SILICON TRANSISTOR
PACKAGE DRAWINGS
2SC5192
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
1.5
2.8
©
+0.2
+0.2
–0.1
–0.3
(Unit: mm)
1994

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2SC5192 Summary of contents

Page 1

... C) A SYMBOL RATING UNIT CBO CEO EBO I 100 200 150 ˚ –65 to +150 ˚C stg SILICON TRANSISTOR 2SC5192 PACKAGE DRAWINGS (Unit: mm) +0.2 2.8 –0.3 +0.2 1.5 –0.1 5˚ 5˚ 5˚ 5˚ PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter © 1994 ...

Page 2

... GHz mA 2.0 GHz mA 2.0 GHz mA 2.0 GHz CE C Note 1.0 MHz CB E 350 s, Duty cycle 2 %, Pulsed 2SC5192 MIN. TYP. MAX. UNIT 100 nA 100 nA 80 160 3 4 1.7 2 4.5 GHz 9 GHz ...

Page 3

... 100 = 0 GHz 100 1 2 2SC5192 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.5 1 Base to Emitter Voltage V ( CURENT GAIN vs. COLLECTOR CURRENT 0 100 Collector Current I (mA) C INSERTION GAIN vs. COLLECTOR CURRENT V ...

Page 4

... Collector Current I (mA) C MAXIMUM AVAILABLE GAIN / INSERTION POWER GAIN vs. FREQUENCY 40 30 MAG 21e 10 0 0.1 0.2 0 Frequency f (GHz) 4 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1 GHz 0.8 0.6 0.4 0.2 50 100 0 2.0 Collector to Base Voltage 2SC5192 MHz 4.0 6.0 8.0 10.0 (V) CB ...

Page 5

... S 22 MAG ANG 0.983 –8.7 0.957 –17.1 0.906 –25.2 0.851 –31.8 0.801 –38.3 0.744 –43.5 0.702 –47.8 0.646 –51.5 0.615 –55.8 0.575 –58.7 0.544 –62.1 0.520 – ...

Page 6

... S 22 MAG ANG 0.904 –25.0 0.762 –43.3 0.612 –58.0 0.508 –66.4 0.427 –74.9 0.367 –81.4 0.331 –86.5 0.286 –93.8 0.261 –99.0 0.240 –101.7 0.222 –110.7 0.210 – ...

Page 7

... S 22 MAG ANG 0.798 –38.5 0.593 –62.6 0.443 –78.3 0.350 –88.7 0.304 –99.0 0.260 –107.8 0.231 –114.9 0.213 –123.1 0.194 –131.3 0.188 –135.6 0.189 –145.9 0.187 – ...

Page 8

... S 22 MAG ANG 0.956 –13.1 0.892 –24.3 0.801 –33.8 0.711 –40.6 0.636 –46.5 0.573 –50.9 0.522 –54.1 0.474 –56.7 0.443 –59.2 0.407 –61.6 0.383 –64.3 0.357 – ...

Page 9

... S 22 MAG ANG 0.890 –22.5 0.743 –38.5 0.604 –49.4 0.504 –55.6 0.423 –60.5 0.371 –64.1 0.327 –66.8 0.290 –70.2 0.268 –73.3 0.245 –75.7 0.226 –79.4 0.203 – ...

Page 10

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 2SC5192 M4 94.11 ...

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