2SC5181 NEC, 2SC5181 Datasheet

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2SC5181

Manufacturer Part Number
2SC5181
Description
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
Manufacturer
NEC
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5181-T1
Manufacturer:
NEC
Quantity:
51 000
Document No. P12105EJ2V0DS00 (2nd edition)
(Previous No. TC-2478)
Date Published November 1996 N
Printed in Japan
FEATURES
• Low current consumption and high gain
• Ultra Super Mini-Mold package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
2SC5181
2SC5181-T1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
PART
NUMBER
|S
|S
* Contact your NEC sales representatives to order samples for
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
21e
21e
evaluation (available in batches of 50).
|
|
2
2
= 10.5 dB
= 9.0 dB
50 units/box
3 000 units/reel
TYP.
QUANTITY
TYP.
@V
@ V
FOR LOW-NOISE MICROWAVE AMPLIFICATION
CE
CE
= 1 V, I
= 2 V, I
V
V
V
T
Embossed tape, 8 mm wide, pin No. 3
(collector) facing the perforation
P
CBO
CEO
EBO
I
T
C
stg
T
j
C
= 5 mA, f = 2 GHz
C
= 7 mA, f = 2 GHz
DATA SHEET
ARRANGEMENT
–65 to +150
A
= 25 C)
150
10
30
5
3
2
mW
mA
V
V
V
C
C
SILICON TRANSISTOR
PACKAGE DIMENSIONS
PIN CONNECTIONS
2
1
(Units: mm)
2SC5181
1. Emitter
2. Base
3. Collector
1.6 ± 0.1
0.8 ± 0.1
©
3
1994

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2SC5181 Summary of contents

Page 1

... Embossed tape wide, pin No. 3 (collector) facing the perforation = CBO CEO EBO 150 –65 to +150 C stg SILICON TRANSISTOR 2SC5181 PACKAGE DIMENSIONS (Units: mm) 1.6 ± 0.1 0.8 ± 0 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector © 1994 ...

Page 2

... GHz 8.5 12 GHz 0.4 0 350 s, duty cycle 2 %, pulsed 2SC5181 CONDITIONS = mA GHz mA GHz mA GHz mA GHz mA GHz mA GHz C *2 ...

Page 3

... INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz 2SC5181 0.5 1.0 – Base to Emitter Voltage – CURRENT GAIN vs. COLLECTOR CURRENT 100 I – Collector Current – ...

Page 4

... NOISE FIGURE vs. COLLECTOR CURRENT GHz – Collector Current – FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.8 0 0.4 0.2 20 0.0 2 2SC5181 MHz 4.0 6.0 8.0 10.0 – Collector to Base Voltage – V ...

Page 5

... S22 MAG ANG 0.934 –25.9 0.847 –32.1 0.759 –39.9 0.726 –47.4 0.688 –53.1 0.636 –58.2 0.575 –64.2 0.530 –68.9 0.495 –74.6 S22 MAG ANG 0.754 –37.3 0.629 – ...

Page 6

... S22 MAG ANG 0.526 –39.4 0.434 –40.5 0.375 –42.1 0.355 –44.8 0.335 –47.0 0.314 –49.2 0.283 –54.0 0.262 –56.1 0.247 –62.0 S22 MAG ANG 0.940 –24.4 0.861 – ...

Page 7

... S22 MAG ANG 0.676 –37.8 0.560 –41.6 0.478 –45.6 0.445 –49.2 0.413 –51.6 0.383 –54.0 0.345 –58.9 0.317 –61.2 0.301 –66.0 S22 MAG ANG 0.610 –38.1 0.507 – ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 8 2SC5181 M4 96.5 ...

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