2SC5012 NEC, 2SC5012 Datasheet

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2SC5012

Manufacturer Part Number
2SC5012
Description
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
Manufacturer
NEC
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC5012
Manufacturer:
NEC
Quantity:
20 000
Part Number:
2SC5012-T1-A
Manufacturer:
NEC
Quantity:
20 000
Document No. P10400EJ2V0DS00 (2nd edition)
(Previous No. TD-2412)
Date Published July 1995 P
Printed in Japan
FEATURES
• Small Package
• High Gain Bandwidth Product (f
• Low Noise, High Gain
• Low Voltage Operation
ORDERING INFORMATION
* Please contact with responsible NEC person, if you require
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2SC5012-T1
2SC5012-T2
PART
NUMBER
evaluation sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC5012)
3 Kpcs/Reel.
3 Kpcs/Reel.
QUANTITY
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to
perforation side of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
Caution; Electrostatic Sensitive Device.
4 PINS SUPER MINI MOLD
T
V
V
V
= 9 GHz TYP.)
T
P
CBO
CEO
I
T
EBO
stg
C
T
j
PACKING STYLE
DATA SHEET
A
–65 to +150
= 25 ˚C)
150
150
1.5
20
10
65
mW
mA
˚C
˚C
V
V
V
SILICON TRANSISTOR
0.4
PACKAGE DIMENSIONS
+0.1
–0.05
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
in millimeters
2
1
1.25 ± 0.1
2.1 ± 0.2
2SC5012
0 to 0.1
3
4
0.3
(LEADS 2, 3, 4)
©
0.15
+0.1
–0.05
+0.1
–0.05
1993

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2SC5012 Summary of contents

Page 1

... NUMBER 2SC5012-T1 3 Kpcs/Reel. 2SC5012-T2 3 Kpcs/Reel. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5012) ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Document No ...

Page 2

... A MIN. TYP. MAX. UNIT 1 100 250 9.0 GHz 0.25 0 1.2 2 Pulsed. GB R38 125 to 250 2SC5012 TEST CONDITION mA MHz mA ...

Page 3

... A 200 140 A 120 A 100 100 INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz 100 2SC5012 0.5 1.0 - Base to Emitter Voltage - V 10 100 - Collector Current - 100 - Collector Current - ...

Page 4

... I - Collector Current - mA C FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 MHz 1.0 0.5 0.2 0 Collector to Base Voltage - MAXIMUM AVAILABLE GAIN/INSERTION POWER GAIN vs. FREQUENCY 0.1 0 Frequency - GHz 50 2SC5012 MAG 21e 1.0 5.0 ...

Page 5

... S 22 MAG ANG .826 –22.7 .644 –30.4 .543 –32.3 .470 –31.9 .430 –32.1 .412 –31.9 .388 –30.4 .372 –31.3 .360 –32.8 .358 –31.8 .342 –33.2 .334 – ...

Page 6

... S 22 MAG ANG .973 –9.8 .912 –18.1 .847 –25.2 .772 –29.6 .697 –34.0 .640 –36.8 .607 –38.3 .563 –40.8 .535 –42.0 .510 –42.4 .488 –43.9 .475 – ...

Page 7

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 8 2SC5012 M4 94.11 ...

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