2SC5006 NEC, 2SC5006 Datasheet

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2SC5006

Manufacturer Part Number
2SC5006
Description
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Manufacturer
NEC
Datasheet

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Document No. P10385EJ2V0DS00 (2nd edition)
(Previous No. TD-2399)
Date Published July 1995 P
Printed in Japan
DESCRIPTION
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is an NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High f
• Low C
• Low NF
• High |S
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
* Please contact with responsible NEC person, if you require evaluation
ABSOLUTE MAXIMUM RATINGS (T
2SC5006
2SC5006-T1
sample. Unit sample quantity shall be 50 pcs.
The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
PART
NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
T
re
21e
|
2
: 4.5 GHz TYP. (@ V
: 0.7 pF TYP. (@ V
: 1.2 dB TYP. (@ V
: 9 dB TYP. (@ V
50 pcs./Unit
3 kpcs./Reel
QUANTITY
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
CE
CE
CE
= 3 V, I
CE
= 3 V, I
= 3 V, I
V
V
V
= 3 V, I
T
P
CBO
CEO
EBO
I
T
C
stg
PACKING STYLE
T
j
DATA SHEET
C
A
E
= 7 mA, f = 1 GHz)
C
= 25 ˚C)
= 0, f = 1 MHz)
C
= 7 mA, f = 1 GHz)
–60 to +150
= 7 mA, f = 1 GHz)
100
125
150
3.0
20
12
mW
mA
˚ C
˚ C
V
V
V
SILICON TRANSISTOR
PACKAGE DIMENSIONS
1. Emitter
2. Base
3. Collector
2
1
in millimeters
2SC5006
1.6 ± 0.1
0.8 ± 0.1
©
3
1993

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2SC5006 Summary of contents

Page 1

... PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity ...

Page 2

... ˚C) A MIN. TYP. MAX. UNIT 1 160 3.0 4.5 GHz 0.7 1 7.0 9.0 dB 1.2 2 2SC5006 TEST CONDITIONS mA GHz MHz mA GHz ...

Page 3

... INSERTION POWER GAIN vs. COLLECTOR CURRENT 0 100 I 2SC5006 0.5 1.0 – Base to Emitter Voltage – – Collector Current – 100 – Collector Current – ...

Page 4

... COLLECTOR TO BASE VOLTAGE 2.0 1.0 0.5 0.2 0 – Collector to Base Voltage – MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY 100 0.1 0 2SC5006 MAG 21e 0.5 1.0 2.0 5.0 f – Frequency – GHz ...

Page 5

... S22 MAG ANG .782 –34.1 .551 –50.9 .412 –58.5 .331 –62.2 .278 –64.8 .238 –66.7 .212 –68.1 .190 –70.6 .173 –71.8 .160 –75.2 .147 –76.7 .140 –79.9 .129 – ...

Page 6

... S22 MAG ANG .840 –27.9 .634 –43.9 .494 –51.4 .405 –55.4 .346 –57.7 .303 –59.3 .273 –60.6 .249 –62.3 .230 –63.4 .216 –66.2 .203 –67.4 .195 –69.8 .183 – ...

Page 7

... S22 MAG ANG .980 –8.3 .938 –15.7 .882 –21.7 .831 –26.4 .787 –30.1 .750 –33.5 .721 –36.4 .697 –39.3 .677 –41.9 .660 –44.9 .650 –47.9 .640 –50.9 .632 – ...

Page 8

... S22 MAG ANG .900 –23.1 .740 –39.7 .602 –49.8 .505 –56.5 .437 –61.3 .385 –65.0 .349 –68.3 .320 –71.7 .299 –74.6 .284 –78.2 .268 –81.7 .261 –85.0 .251 – ...

Page 9

... [MEMO] 2SC5006 9 ...

Page 10

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 10 2SC5006 M4 94.11 ...

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