2SC4187 NEC, 2SC4187 Datasheet

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2SC4187

Manufacturer Part Number
2SC4187
Description
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
Manufacturer
NEC
Datasheet

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Document No. P10370EJ3V0DS00 (3rd edition)
Date Published February 1996 P
Printed in Japan
DESCRIPTION
current application up to UHF band. The 2SC4187 is ideal for pagers,
electro-optic detector postamplifier applications, and other battery pow-
ered systems. Super mini mold package makes it suitable for use in small
type equipments such as HICs.
FEATURES
• Low Noise : NF = 3.0 dB TYP. @V
• High Gain : |S
• Small Package
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
h
PRECAUTION
FE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
The 2SC4187 is designed primarily for use in low voltage and low
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Avoid high static voltages or electric fields so that this device would not suffer any damage due to those voltages or fields.
Classification
Class
Marking
h
FE
Characteristic
50 to 100
21e
R6A
R6A
|
2
= 6.5 dB TYP. @V
NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
80 to 160
R6B
R6B
Symbol
CE
|S
V
V
V
I
I
h
NF
C
CBO
EBO
T
f
21e
= 1 V, I
P
CE
FE
SUPER MINI MOLD
CBO
CEO
EBO
I
T
T
re
stg
C
T
DATA SHEET
j
|
2
A
= 1 V, I
A
= 25 ˚C)
125 to 250
= 25 ˚C)
C
–65 to +150
MIN.
R6C
R6C
= 250 A, f = 1.0 GHz
4.0
50
C
150
= 1 mA, f = 1.0 GHz
15
50
8
2
5
TYP.
100
4.0
0.5
6.5
3.0
mW
mA
˚ C
˚ C
V
V
V
MAX.
250
0.1
0.1
0.7
4.5
SILICON TRANSISTOR
GHz
Unit
pF
dB
dB
A
A
PACKAGE DIMENSIONS
1. Emitter
2. Base
3. Collector
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
CE
CE
= 1 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
2SC4187
in millimeters
2
1
Test Conditions
1.25 ±0.1
2.1 ±0.1
C
E
C
C
C
E
E
= 250 A, f = 1 GHz
= 0
= 0
= 250 A, pulsed
= 1 mA, f = 1 GHz
= 0, f = 1 MHz
= 1 mA, f = 1 GHz
©
Marking
3
1996

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2SC4187 Summary of contents

Page 1

... MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4187 is designed primarily for use in low voltage and low current application up to UHF band. The 2SC4187 is ideal for pagers, electro-optic detector postamplifier applications, and other battery pow- ered systems. Super mini mold package makes it suitable for use in small type equipments such as HICs ...

Page 2

... 0 – Collector Current – TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 1.0 GHz 150 100 – Ambient Temperature – ˚C A 2SC4187 1.0 GHz Free Air 50 100 150 ...

Page 3

... S22 MAG ANG 0.995 –4.5 0.979 –7.9 0.943 –12.8 0.927 –15.0 0.870 –17.3 0.865 –19.6 0.833 –20.8 0.825 –23.9 0.805 –25.6 0.772 –29.4 0.745 –31.3 0.705 –33.3 0.676 – ...

Page 4

... S22 MAG ANG 0.997 –4.1 0.983 –7.0 0.950 –11.6 0.939 –13.5 0.887 –15.5 0.885 –17.7 0.857 –18.8 0.852 –21.9 0.834 –23.5 0.803 –27.2 0.777 –29.1 0.737 –31.0 0.708 – ...

Page 5

... S22 MAG ANG 0.998 –3.8 0.984 –6.7 0.953 –11.1 0.942 –12.9 0.891 –14.8 0.891 –17.1 0.865 –18.0 0.860 –21.1 0.843 –22.6 0.813 –26.4 0.788 –28.2 0.747 –30.0 0.720 – ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 6 2SC4187 M4 94.11 ...

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