2SB709A Panasonic Semiconductor, 2SB709A Datasheet - Page 2

• Manufacturer Part Number: 2SB709A
• Description: Silicon PNP epitaxial planar type
• Manufacturer: Panasonic Semiconductor

Transistor
2
–400
–350
–300
–250
–200
–150
–100
240
200
160
120
–50
600
500
400
300
200
100
80
40
0
0
0
–1
0
0
Base to emitter voltage V
Ambient temperature Ta ( ˚C )
Ta=75˚C
Collector current I
20
–3
25˚C
–25˚C
40
– 0.6
–10
I
h
P
60
B
FE
C
— V
–30
— Ta
80
— I
100
BE
–100
–1.2
C
C
120
V
V
Ta=25˚C
CE
CE
–300
( mA )
BE
=–10V
=–5V
140
( V )
–1000
–1.8
160
–120
–100
–240
–200
–160
–120
–80
–60
–40
–20
–80
–40
160
140
120
100
80
60
40
20
Collector to emitter voltage V
0
0
0
0.1
0
0
Base to emitter voltage V
V
Ta=25˚C
CB
=–10V
Emitter current I
0.3
–2
– 0.4
Ta=75˚C
I
I
–4
1
C
C
– 0.8
f
T
— V
— V
— I
–6
3
25˚C
–1.2
CE
BE
E
–25˚C
–8
10
E
I
B
( mA )
V
=–300 A
–1.6
Ta=25˚C
CE
–250 A
–200 A
–150 A
–100 A
–10
BE
30
–50 A
=–5V
CE
( V )
–2.0
–12
100
( V )
– 0.003
– 0.001
– 0.3
– 0.1
– 0.03
– 0.01
–60
–50
–40
–30
–20
–10
–10
–3
–1
0
8
7
6
5
4
3
2
1
0
Collector to base voltage V
–1
–1
0
V
Ta=25˚C
CE
Collector current I
–3
=–5V
Base current I
–3
V
C
–150
25˚C
–10
CE(sat)
ob
I
C
–25˚C
— V
Ta=75˚C
— I
–30
–10
— I
B
2SB709A
CB
–300
–100
B
C
C
–30
( A )
( mA )
I
f=1MHz
Ta=25˚C
–300
E
I
C
=0
CB
/I
B
=10
–1000
–450
–100
( V )