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Power Transistors
2SB0968
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• Possible to solder radiation fin directly to printed circuit board
• High collector-emitter voltage (Base open) V
• Large collector power dissipation P
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation (T
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. * : Rank classification
Rank
Parameter
h
Parameter
FE1
80 to 160
C
(2SB968)
= 25°C)
Q
a
Symbol
C
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
h
I
T
V
V
CBO
CEO
EBO
a
CP
120 to 220
I
I
I
h
C
stg
CE(sat)
BE(sat)
C
C
FE1
CBO
CEO
EBO
j
f
CBO
CEO
FE2
= 25°C
T
ob
*
R
−55 to +150
CEO
Rating
I
I
V
V
V
V
V
I
I
V
V
C
C
C
C
−1.5
−50
−40
150
CE
Note) The part number in the parenthesis shows conventional part number.
CB
CE
EB
CE
CE
CB
−5
−3
10
= −1 mA, I
= −2 mA, I
= −1.5 A, I
= −2 A, I
SJD00035AED
= −10 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −20 V, I
= −20 V, I
B
Conditions
C
Unit
B
= − 0.2 A
E
B
C
C
C
°C
°C
W
V
V
V
A
A
B
E
E
= − 0.5 A, f = 200 MHz
= 0
= 0
= − 0.15 A
= 0
= −1 A
= −1 mA
= 0
= 0
= 0, f = 1 MHz
Note) Self-supported type package is also prepared.
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G1 Package
1
1
4.35
6.5
5.3
4.6
Min
−50
−40
80
10
2
±0.1
±0.1
±0.1
±0.1
2
3
3
2.3
Typ
150
0.75
45
±0.1
±0.1
1.0
0.1
±0.1
0.5
±0.05
−100
Max
−1.5
−10
220
−1
−1
2.3
(4.35)
±0.1
(5.3)
(3.0)
±0.1
Unit: mm
0.5
MHz
Unit
±0.1
µA
µA
µA
pF
V
V
V
V
1