BC857BT Infineon Technologies AG, BC857BT Datasheet
BC857BT
Manufacturer Part Number
BC857BT
Description
PNP Silicon AF Transistor
Manufacturer
Infineon Technologies AG
Datasheet
1.BC857BT.pdf
(2 pages)
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MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
I EBO
BV CBO
BV CBO
BV CEO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(ON)
V BE(ON)
f T
C c
C e
NF
h FE
PNP SILICON TRANSISTOR
SURFACE MOUNT
BC856T SERIES
BC857T SERIES
SOT-523 CASE
TEST CONDITIONS
V CB =30V
V CB =30V, T A =150°C
V EB =5.0V
I C =10μA (BC857T)
I C =10μA (BC856T)
I C =10mA (BC857T)
I C =10mA (BC856T)
I E =10μA
I C =10mA, I B =0.5mA
I C =100mA, I B =5.0mA
I C =2.0mA, V CE =5.0V
I C =10mA, V CE =5.0V
V CE =5.0V, I C =10mA, f=100MHz
V CB =10V, I E =0, f=1.0MHz
V EB =0.5V, I C =0, f=1.0MHz
V CE =5.0V, I C =200μA,
R S =2.0KΩ, f=1.0KHz, BW=200Hz
V CE =5.0V, I C =2.0mA
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856T and
BC857T Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SYMBOL
T J , T stg
MIN
125
V CBO
V CEO
V EBO
I CM
Θ JA
MIN
0.58
BC856AT
BC857AT
I BM
100
P D
5.0
I C
50
80
45
65
MAX
250
BC857T
50
45
TYP
10
MIN
220
BC856BT
BC857BT
-65 to +150
100
200
100
250
500
5.0
MAX
475
BC856T
MAX
w w w. c e n t r a l s e m i . c o m
0.20
0.40
0.70
0.77
100
R1 (20-November 2009)
5.0
2.5
15
10
80
65
MIN
420
BC857CT
UNITS
UNITS
°C/W
MHz
mW
mA
mA
mA
nA
μA
nA
dB
MAX
°C
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
800
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