2SD965A UTC, 2SD965A Datasheet - Page 3

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2SD965A

Manufacturer Part Number
2SD965A
Description
LOW VOLTAGE HIGH CURRENT TRANSISTOR
Manufacturer
UTC
Datasheet

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2SD965/A
TYPICAL CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
0
6
5
4
3
2
1
0
10
10
10
10
0
0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
10
3
2
1
0
V
Base to Emitter Voltage, V
CE
0
Collector-Emitter Voltage ( V)
Current Gain-Bandwidth Product
0.4
=2V
Collector Current, I
Static Characteristics
Base-Emitter on Voltage
0.4
Ta=75℃
0.8
0.8
10
1
1.2
1.2
I
B
I
I
V
B
=3.0mA
I
B
I
I
=2.5mA
B
B
B
CE
=2.0mA
=1.0mA
=0.5mA
=1.5mA
C
=6V
10
-25℃
(mA)
1.6
25℃
1.6
2
BE
(V)
2.0
2.0
10
3
10
10
10
10
10
10
10
10
10
10
10
10
10
3
2
1
0
10
3
2
1
0
4
3
2
1
10
-1
-1
0
NPN SILICON TRANSISTOR
Collector Output Capacitance
I
Collector-Base Voltage (V)
C
Collector Current, I
Collector Current, I
=30·I
10
10
Saturation Voltage
V
1
1
DC Current Gain
CE
B
10
=2V
0
f=1MHz
V
I
10
BE(SAT)
10
E
=0
2
2
V
10
CE(SAT)
C
C
1
10
10
(mA)
(mA)
3
3
QW-R209-007,B
10
10
10
2
3 of 4
4
4

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