2SD965A UTC, 2SD965A Datasheet - Page 2

• Manufacturer Part Number: 2SD965A
• Description: LOW VOLTAGE HIGH CURRENT TRANSISTOR
• Manufacturer: UTC

2SD965/A
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
ABSOLUTE MAXIMUM RATING
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
2SD965A
2SD965
FE2
230-380
SYMBOL
V
BV
BV
BV
CE(SAT)
I
I
C
h
Q
CBO
EBO
f
FE
CBO
CEO
T
EBO
ob
(Ta=25 ℃ )
2SD965
2SD965A
SOT-89
TO-92
TO-252
I
I
I
V
V
V
V
V
I
V
V
C
C
E
C
(Ta=25 ℃ , unless otherwise specified)
CB
EB
CE
CE
CE
CE
CB
=100 µ A, I
=1mA, I
=10 µ A, I
=3A, I
=7V, I
=10V, I
=2V, I
=2V, I
=2V, I
=6V, I
=20V, I
TEST CONDITIONS
B
= 0.1A
C
B
C
C
C
C
C
=0
=0
=1mA
=0.5A
=2A
=50mA
E
E
=0
E
=0
=0, f=1MHz
=0
SYMBOL
V
V
V
T
P
T
CBO
CEO
EBO
I
STG
C
C
J
340-600
R
NPN SILICON TRANSISTOR
-65 ~ +150
MIN
RATINGS
230
150
40
20
30
7
500
750
150
40
20
30
7
1
5
TYP
200
150
560-800
MAX
S
100
100
800
50
1
QW-R209-007,B
UNIT
mW
mW
UNIT
W
℃
℃
2 of 4
V
V
V
V
A
MHz
nA
nA
pF
V
V
V
V
V