2SD2345 Panasonic Semiconductor, 2SD2345 Datasheet

no-image

2SD2345

Manufacturer Part Number
2SD2345
Description
Silicon NPN epitaxial planer type(For low-frequency amplification)
Manufacturer
Panasonic Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD2345-S(TX)
Manufacturer:
PANA
Quantity:
3 456
Part Number:
2SD2345GSL
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD2345J-S(TX)+
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
FE
Features
High foward current transfer ratio h
Low collector to emitter saturation voltage V
High emitter to base voltage V
Low noise voltage NV.
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
400 ~ 800
R
600 ~ 1200 1000 ~ 2000
Symbol
V
V
V
I
I
P
T
T
CP
C
S
C
j
stg
CBO
CEO
EBO
EBO
I
I
V
V
V
h
V
f
CBO
CEO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
*
.
(Ta=25˚C)
FE
–55 ~ +125
.
Ratings
T
100
125
125
50
40
15
50
V
V
I
I
I
V
I
V
CE(sat)
C
C
E
C
CB
CE
CE
CB
= 10 A, I
= 1mA, I
= 10 A, I
= 10mA, I
= 20V, I
= 10V, I
= 20V, I
= 10V, I
.
B
Unit
mW
C
mA
mA
Conditions
E
B
C
˚C
˚C
E
E
B
V
V
V
= 0
= 0
= 0
= 0
= 0
= 2mA
= –2mA, f = 200MHz
= 1mA
Marking symbol :
1:Base
2:Emitter
3:Collector
min
400
50
40
15
1
2
EIAJ:SC–75
SS–Mini Type Package
0.4
0.05
120
1Z
typ
1.6 0.15
0.8 0.1
0.2 0.1
2000
max
100
0.2
0.4
1
3
Unit: mm
MHz
Unit
nA
V
V
V
V
A
1

Related parts for 2SD2345

2SD2345 Summary of contents

Page 1

... Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Features High foward current transfer ratio h Low collector to emitter saturation voltage V High emitter to base voltage V EBO Low noise voltage NV. Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage ...

Page 2

... Collector current — 100 V =10V CE G =80dB V Function=FLAT Ta=25˚ =100k g 60 22k 0.01 0.03 0.1 0 Collector current I C 2SD2345 I — 120 V =10V CE 25˚C 100 Ta=75˚C –25˚ 0.4 0.8 1.2 1.6 2 Base to emitter voltage — ...

Related keywords