2SD1271 Panasonic Semiconductor, 2SD1271 Datasheet
2SD1271
Manufacturer Part Number
2SD1271
Description
Silicon PNP epitaxial planar type(For power switching)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD1271.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD1271
Manufacturer:
PANASONIC
Quantity:
10 000
Company:
Part Number:
2SD1271
Manufacturer:
PANASONIC
Quantity:
50
Power Transistors
2SD1271, 2SD1271A
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB946 and 2SB946A
*
h
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
FE2
Features
Low collector to emitter saturation voltage V
Satisfactory linearity of foward current transfer ratio h
Large collector current I
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
FE2
Rank classification
Parameter
Parameter
90 to 180
2SD1271
2SD1271A
2SD1271
2SD1271A
T
Ta=25 C
C
Q
=25 C
2SD1271
2SD1271A
130 to 260
C
Symbol
V
V
V
I
I
P
T
T
CP
C
P
C
j
stg
CBO
CEO
EBO
I
I
V
h
h
V
V
f
t
t
t
on
stg
f
CBO
EBO
T
FE1
FE2
(T
Symbol
CEO
CE(sat)
BE(sat)
C
*
(T
=25˚C)
–55 to +150
C
=25˚C)
Ratings
130
150
100
150
80
15
40
7
7
2
V
V
I
V
V
I
I
V
I
V
CE(sat)
C
C
C
C
CB
EB
CE
CE
CE
CC
= 10mA, I
= 5A, I
= 5A, I
= 3A, I
= 5V, I
= 2V, I
= 2V, I
= 10V, I
= 100V, I
= 50V
B
B
B1
FE
C
C
C
= 0.25A
= 0.25A
Unit
Conditions
= 0.3A, I
C
˚C
˚C
W
B
V
V
V
A
A
= 0
= 0.1A
= 3A
E
= 0.5A, f = 10MHz
= 0
= 0
B2
= – 0.3A,
min
100
80
45
90
1
10.0 0.2
5.08 0.5
5.5 0.2
2
TO–220 Full Pack Package(a)
3
typ
0.5
1.5
0.1
30
2.54 0.25
1.4 0.1
0.8 0.1
3.1 0.1
2.7 0.2
1.3 0.2
max
0.5
260
0.5
1.5
10
50
+0.2
–0.1
4.2 0.2
1:Base
2:Collector
3:Emitter
Unit: mm
MHz
Unit
V
V
V
A
A
s
s
s
1
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2SD1271 Summary of contents
Page 1
... Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Features Low collector to emitter saturation voltage V Satisfactory linearity of foward current transfer ratio h Large collector current I C Full-pack package which can be installed to the heat sink with ...
Page 2
... A ) Collector current — 10000 V =10V CE f=10MHz 3000 T =25˚C C 1000 300 100 0.01 0.03 0.1 0 Collector current 2SD1271, 2SD1271A V — I CE(sat =25˚ (2) (1) 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0 Collector current — ...
Page 3
... Area of safe operation (ASO) 100 Non repetitive pulse T =25˚ t=0.5ms 3 10ms 1 1ms 0.3 DC 0.1 0.03 0. 100 Collector to emitter voltage V — t th(t) (1) Without heat sink (2) With a 100 100 2mm Al heat sink (1) ( 2SD1271, 2SD1271A 300 1000 ( ...