MT58L256V36F Micron Semiconductor, MT58L256V36F Datasheet - Page 18

• Manufacturer Part Number: MT58L256V36F
• Description: (MT58Lxxxx) 8Mb SYNCBURST SRAM
• Manufacturer: Micron Semiconductor

FBGA CAPACITANCE
TQFP THERMAL RESISTANCE
FBGA THERMAL RESISTANCE
NOTE: 1. This parameter is sampled.
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Pins
(Bottom)
DESCRIPTION
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
2. Preliminary package data.
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
Test conditions follow standard test
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
T
A
CONDITIONS
CONDITIONS
= 25°C; f = 1 MHz
CONDITIONS
18
FLOW-THROUGH SYNCBURST SRAM
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
C
C
C
CK
1-layer
O
I
TYP
2.5
2.5
SYMBOL
SYMBOL
4
JA
JA
JC
JC
JB
MAX
3.5
3.5
5
TYP
TYP
40
40
17
8
9
UNITS
©2002, Micron Technology, Inc.
pF
pF
pF
UNITS NOTES
UNITS NOTES
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES
1
1
1
1
1
1
1
1