MT28F008B5 Micron Technology, MT28F008B5 Datasheet - Page 23

• Manufacturer Part Number: MT28F008B5
• Description: (MT28F008B5 / MT28F800B5) FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
RECOMMENDED DC WRITE/ERASE CONDITIONS
Commercial Temperature (0ºC
WRITE/ERASE CURRENT DRAIN
Commercial Temperature (0ºC
Notes: 1. WRITE operations are tested at V
8Mb Smart 5 Boot Block Flash Memory
MT28F800B5_3.fm - Rev. 3, Pub. 8/2002
PARAMETER/CONDITION
V
V
Boot block unlock voltage
V
PARAMETER/CONDITION
WORD WRITE CURRENT: V
WORD WRITE CURRENT: V
BYTE WRITE CURRENT: V
BYTE WRITE CURRENT: V
ERASE CURRENT: V
ERASE CURRENT: V
ERASE SUSPEND CURRENT: V
(ERASE suspended)
ERASE SUSPEND CURRENT: V
(ERASE suspended)
4
PP
PP
CC
U
WRITE/ERASE lockout voltage
voltage during WRITE/ERASE operation
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WRITE/ERASE lockout voltage
2. Absolute WRITE/ERASE protection when V
3. When 5V V
4. Applies to MT28F800B5 only.
5. Applies to MT28F008B5 and MT28F800B5 with BYTE# = LOW.
6. Parameter is specified when device is not accessed. Actual current draw will be Icc
is executed while the device is in erase suspend mode.
operations.
CC
PP
SUPPLY
SUPPLY
CC
CC
PP
and V
CC
PP
SUPPLY
SUPPLY
SUPPLY
CC
PP
SUPPLY
PP
SUPPLY
SUPPLY
are used, V
T
T
A
A
+70ºC) and Extended Temperature (-40ºC
+70ºC) and Extended Temperature (-40ºC
PP
CC
voltages equal to or less than the previous erase.
cannot exceed V
DataSheet4U.com
PP
SMART 5 BOOT BLOCK FLASH MEMORY
V
PPLK
.
PP
SYMBOL
by more than 500mV during WRITE and ERASE
V
V
23
V
1
V
PPLK
LKO
PPH
HH
Micron Technology, Inc. Reserves the right to change products or specifications without notice.
SYMBOL
I
I
I
I
I
CC
I
CC
I
CC
I
CC
PP
PP
PP
PP
MIN
4.5
10
10
11
12
2
9
3
4
5
6
–
T
T
A
A
MAX
MAX
12.6
200
1.5
5.5
25
20
25
20
30
40
10
12
–
+85ºC); V
+85ºC); V
plus read current if a READ
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
CC
µA
CC
V
V
V
V
©2002, Micron Technology Inc.
= +5V ±10%
= +5V ±10%
8Mb
NOTES
NOTES
2
3
4
4
5
5
6