MT28F008B5 Micron Technology, MT28F008B5 Datasheet - Page 14

• Manufacturer Part Number: MT28F008B5
• Description: (MT28F008B5 / MT28F800B5) FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
WRITE/ERASE CYCLE ENDURANCE
and fabricated to meet advanced firmware storage
requirements. To ensure this level of reliability, V
must be at 5V ±10% during WRITE or ERASE cycles.
Due to process technology advances, 5V V
for application and production programming.
POWER USAGE
power-saving features that may be utilized in the array
read mode to conserve power. Deep power-down
mode is enabled by bringing RP# LOW. Current draw
(I
HIGH, the device enters standby mode. In this mode,
maximum I
during a WRITE or ERASE, the ISM continues to oper-
ate, and the device consumes the respective active
power until the write or erase is completed.
8Mb Smart 5 Boot Block Flash Memory
MT28F800B5_3.fm - Rev. 3, Pub. 8/2002
4
CC
U
The MT28F800B5 and MT28F008B5 are designed
The MT28F800B5 and MT28F008B5 offer several
) in this mode is a maximum of 20µA. When CE# is
.com
CC
current is 130µA. If CE# is brought HIGH
PP
is optimal
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SMART 5 BOOT BLOCK FLASH MEMORY
PP
POWER-UP
ations is minimized because two consecutive cycles
are required to execute either operation. However, to
reset the ISM and to provide additional protection
while V
must be met:
reset, and the device enters the array read mode.
The likelihood of unwanted WRITE or ERASE, oper-
• RP# must be held LOW until V
• CE# or WE# may be held HIGH and RP# must be
After a power-up or RESET, the status register is
14
Address
Power-Up/Reset Timing Diagram
tional level; or
toggled from V
Data
Micron Technology, Inc. Reserves the right to change products or specifications without notice.
RP#
(5V)
V
NOTE:
CC
CC
is ramping, one of the following conditions
1. V
goes HIGH.
CC
Note 1
must be within the valid operating range before RP#
CC
Figure 2:
-GND-V
t
RWH
t
AA
CC
VALID
.
VALID
CC
is at valid func-
©2002, Micron Technology Inc.
UNDEFINED
8Mb