PDTC114 Philips Semiconductors, PDTC114 Datasheet - Page 3

• Manufacturer Part Number: PDTC114
• Description: NPN resistor-equipped transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1999 May 18
R
I
I
I
h
V
V
V
R1
C
R2
------ -
R1
amb
CBO
CEO
EBO
SYMBOL
SYMBOL
FE
CEsat
i(off)
i(on)
th j-a
c
NPN resistor-equipped transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
E
B
B
C
C
C
C
C
E
= 0; V
= 0; V
= 0; V
= i
= 0; V
= 5 mA; V
= 10 mA; I
= 100 A; V
= 10 mA; V
e
= 0; V
3
CB
CE
CE
EB
CONDITIONS
note 1
= 50 V
= 30 V
= 30 V; T
= 5 V
CE
CB
B
CE
CE
= 0.5 mA
= 5 V
= 10 V; f = 1 MHz
CONDITIONS
= 0.3 V
= 5 V
j
= 150 C
30
2.5
7
0.8
MIN.
VALUE
833
1.1
1.8
10
1
TYP.
PDTC114EE
Product specification
100
1
50
400
150
0.8
13
1.2
2.5
MAX.
UNIT
K/W
nA
mV
V
V
k
pF
UNIT
A
A
A