PDTC114 Philips Semiconductors, PDTC114 Datasheet - Page 2

• Manufacturer Part Number: PDTC114
• Description: NPN resistor-equipped transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN resistor-equipped transistor in an SC-75 plastic
package. PNP complement: PDTA114EE.
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 18
PDTC114EE
V
V
V
V
I
I
P
T
T
T
O
CM
SYMBOL
stg
j
amb
Built-in bias resistors R1 and R2 (typ. 10 k each)
Simplification of circuit design
Reduces number of components and board space.
Especially suitable for space reduction in interface and
driver circuits
Inverter circuit configurations without use of external
resistors.
CBO
CEO
EBO
I
tot
NPN resistor-equipped transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
positive
negative
PARAMETER
MARKING CODE
09
open emitter
open base
open collector
T
amb
2
25 C; note 1
PINNING
handbook, halfpage
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline (SC-75) and symbol.
Top view
1
Fig.2 Equivalent inverter symbol.
base/input
emitter/ground
collector/output
3
MGA893 - 1
2
1
DESCRIPTION
65
65
2
MIN.
1
Product specification
PDTC114EE
R1
3
50
50
10
+40
100
100
150
+150
150
+150
R2
10
MAX.
MAM346
V
V
V
V
V
mA
mA
mW
C
C
C
UNIT
3
2