PDTB123Y NXP Semiconductors, PDTB123Y Datasheet - Page 5
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PDTB123Y
Manufacturer Part Number
PDTB123Y
Description
PNP 500mA 50V resistor-equipped transistors
Manufacturer
NXP Semiconductors
Datasheet
1.PDTB123Y.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PDTB123YT
Manufacturer:
NXP
Quantity:
51 000
Part Number:
PDTB123YT
Manufacturer:
NXP/恩智浦
Quantity:
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Company:
Part Number:
PDTB123YTЈ¬215
Manufacturer:
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Quantity:
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Philips Semiconductors
9397 750 14905
Product data sheet
Fig 1. DC current gain as a function of collector
Fig 3. On-state input voltage as a function of collector
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
(V)
I(on)
10
FE
10
10
10
10
1
1
3
2
1
V
current; typical values
V
current; typical values
10
10
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 5 V
= 0.3 V
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
I
I
006aaa357
C
006aaa359
C
PNP 500 mA resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k
(mA)
(mA)
10
10
Rev. 01 — 27 April 2005
3
3
Fig 2. Collector-emitter saturation voltage as a
Fig 4. Off-state input voltage as a function of collector
V
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
(V)
(V)
I(off)
10
10
10
10
1
1
2
1
I
function of collector current; typical values
V
current; typical values
10
C
amb
amb
amb
CE
amb
amb
amb
1
/I
B
1
= 5 V
= 20
(1)
(2)
(3)
= 100 C
= 25 C
= 40 C
= 40 C
= 25 C
= 100 C
PDTB123Y series
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
1
(1)
(2)
(3)
www.DataSheet4U.com
I
I
C
C
(mA)
(mA)
006aaa358
006aaa360
10
10
2
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