BAL99E6327 Infineon Technologies Corporation, BAL99E6327 Datasheet - Page 2

• Manufacturer Part Number: BAL99E6327
• Description: Silicon Switching Diode
• Manufacturer: Infineon Technologies Corporation

AC characteristics
Reverse recovery time
I
measured at I
Electrical Characteristics at T
Parameter
DC characteristics
Breakdown voltage
I
Forward voltage
I
I
I
I
Reverse current
V
Reverse current
V
V
Test circuit for reverse recovery time
Pulse generator: t
Diode capacitance
V
(BR)
F
F
F
F
F
R
R
R
R
= 10 mA, I
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 70 V
= 25 V, T
= 70 V
= 0 V, f = 1 MHz
= 100 µA
A
R
R
= 150 °C
= 10 mA, R
= 1mA
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
F
D.U.T.
L
= 100
A
i
= 50
Oscillograph
= 25°C, unless otherwise specified.


,
EHN00014

Oscillograph: R = 50
2
C
t
Symbol
V
V
I
I
R
R
rr
(BR)
F
D
C


min.
-
-
1pF
-
-
-
-
-
-
-
-

, t
r
Values
= 0.35ns,
typ.
-
-
-
-
-
-
-
-
-
-
max.
1000
1250
715
855
1.5
2.5
Jul-27-2001
30
50
6
-
BAL99
Unit
V
mV
µA
pF
ns