BAL99E6327 Infineon Technologies Corporation, BAL99E6327 Datasheet
BAL99E6327
Manufacturer Part Number
BAL99E6327
Description
Silicon Switching Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAL99E6327.pdf
(4 pages)
Silicon Switching Diode
Type
BAL99
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1 For calculation of R
For high-speed switching applications
thJA
please refer to Application Note Thermal Resistance
1)
S
= 54 °C
Marking
JFs
s
1 = n.c.
1
Pin Configuration
Symbol
V
V
I
I
P
T
T
R
F
FS
j
stg
R
RM
tot
thJS
2 = C
3 = A
3
-65 ... 150
3
Value
250
370
150
4.5
70
70
260
Package
SOT23
1
Jul-27-2001
EHA00002
2
VPS05161
BAL99
Unit
V
mA
A
mW
°C
K/W
2
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BAL99E6327 Summary of contents
Page 1
Silicon Switching Diode For high-speed switching applications Type BAL99 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current Total power dissipation Junction temperature Storage temperature Thermal Resistance 1) Junction ...
Page 2
Electrical Characteristics at T Parameter DC characteristics Breakdown voltage I = 100 µA (BR) Forward voltage 150 mA F Reverse current V = ...
Page 3
Forward current 300 mA 200 150 100 Forward current 25°C A BAL 99 150 F mA 100 typ ...
Page 4
Forward voltage BAL 99 1 100 0.5 0 EHB00010 100 150 ˚ BAL99 Jul-27-2001 ...