SDA9254-2 Infineon Technologies Corporation, SDA9254-2 Datasheet

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SDA9254-2

Manufacturer Part Number
SDA9254-2
Description
2.6mb Dynamic Sequential Access Memory For Television Applications (tv-sam) With On-chip Noise Reduction Filter
Manufacturer
Infineon Technologies Corporation
Datasheet

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2.6 MBit Dynamic Sequential Access Memory
for Television Applications (TV-SAM) with
On-chip Noise Reduction Filter
Preliminary Data
Features
Type
SDA 9254-2
Semiconductor Group
Stores a complete video field (4:1:1)
On chip adaptive recursive noise reduction filter (4:1:1)
4 noise reduction classes selectable
Special noise reduction mode for 4:2:2 applications
212
Triple port architecture
One 16
Two 16
Shift registers independently and simultaneously
accessible (one output shift register is used internally for
noise reduction filtering)
Continuous data flow even at maximum speed
40-MHz shift rate - 0.96-Gbit/s total data rate
All inputs and outputs TTL-compatible
Tristate outputs
Random access of groups of 16
of applications
Refresh-free operation possible
5 V
0 … 70 C operating temperature range
Low power dissipation: 700 mW active, 28 mW standby
Suitable for all common TV standards
Allows flicker and noise reduction simultaneously
with only one field memory
Applications: TV, VCR, image processing,
video printers, data compressors, delay lines,
time base correctors, HDTV
10 % power supply
64
12-bit input shift register
12-bit output shift registers
16
12-bit organization
Ordering Code
on request
12 bits for a wide range
1
P-MQFP-64-1
Package
P-MQFP-64-1
SDA 9254-2
1998-01-16
CMOS IC

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SDA9254-2 Summary of contents

Page 1

MBit Dynamic Sequential Access Memory for Television Applications (TV-SAM) with On-chip Noise Reduction Filter Preliminary Data Features Stores a complete video field (4:1:1) On chip adaptive recursive noise reduction filter (4:1:1) 4 noise reduction classes selectable Special noise reduction ...

Page 2

Functional Description General The SDA 9254 combination of the TV-SAM SDA 9253 and an adaptive recursive filter to achieve a reduction of noise for video signals. To get a closed loop one of the two output ports of ...

Page 3

CLASS Figure 2 Noise Reduction with 4:2:2 Signals Adaptive Field Based Noise Reduction The reduction of noise is performed by recursive filtering. The filter has the following transfer function: For ...

Page 4

SDC0 ... 11 DEMUX Video Input 12 Input 8 Luminance Motion CLASS Detector 3 delayed Luminance 8 Memory DEMUX Port B 12 Figure 3 Block Diagram of the Noise Reduction Filtering To avoid artefacts in moving parts of the picture ...

Page 5

The following diagram shows the requested data format for 4:1:1 signals at the input SDC0 … SDC11. The output data format at pins SQA0 … SQA11 corresponds to the input format. BLN 13.5 MHz SDC 4 ... 11 Y1 SDC ...

Page 6

Circuit Description Memory Architecture As shown in the block diagram of the memory part (see figure 7), the TV-SAM comprises 192 memory arrays, which are accessed in parallel. Each memory array has a size of 212 rows by 64 columns. ...

Page 7

Write Transfer from Latch C to Memory (RE) The data of latch C are transferred to the preaddressed location of the memory array at the rising edge of RE, if the mode bits were set to H (M1) and L ...

Page 8

Data Output A (SQA, SCA, OEA) Data is shifted out through the serial port A (SQA0 … SQA11) at the rising edge of the shift clock SCA. After 16 clock cycles new data have to be transferred from latch A ...

Page 9

The beginning of a block of 16 serial data at port determined by RA and RB, respectively. The end of the serial input data block at port C is controlled by WT. Since RA, RB and ...

Page 10

Figure 5 Typical Memory Cycle Sequence Semiconductor Group 10 SDA 9254-2 1998-01-16 ...

Page 11

Pin Configuration (top view) SDC4 SDC5 SCA SAR SAC SCAD RE V DD1 V SS1 CLASS2 SCB SDC6 SDC7 Figure 6 Semiconductor Group P-MQFP-64 ...

Page 12

Pin Definitions and Functions Pin No. Symbol Input (I) Output (O) 15 SQA11 SQA8 . 21 SQA7 . 22 SQA6 . 27 SQA5 . 28 SQA4 O 31 SQA3 ...

Page 13

Pin Definitions and Functions (cont’d) Pin No. Symbol Input (I) Output (O) 61 CLASS2 I 12 DLO3 O 11 DLO2 O 10 DLO1 O 9 DLO0 O 37 DLI3 I 38 DLI2 I 39 DLI1 I 40 DLI0 I 43 ...

Page 14

Port B OEB SCB 12 Shift Port C Register C Latch 212 Figure 7 Block Diagram of the Memory Semiconductor Group DD1 ...

Page 15

Absolute Maximum Ratings Parameter Storage temperature Soldering temperature Soldering time Input/output voltage Power supply voltage Data out current (short circuit) Total power dissipation Power dissipation per output Operating Range Parameter Supply voltage Supply voltage Supply voltage Supply voltage H-input voltage ...

Page 16

DC Characteristics Parameter Symbol H-output voltage L-output voltage QL Input leakage I I (L) current I Output leakage Q (L) current Average supply ...

Page 17

AC Characteristics Parameter Symbol Memory read write cycle time t RE low time RE t Serial port cycle SC time t RE precharge ...

Page 18

AC Characteristics (cont’ Parameter Symbol lead time t WRL lead time t RWL t Output buffer turn- OFF off delay ...

Page 19

AC Characteristics (cont’ Parameter Symbol Refresh period t REF t Transition time T (rise/fall) L-serial clock time t SCL t H-serial clock time SCH Hold time ...

Page 20

Operation Truth Table RE Cycle N SCAD SAR SAC M0 RA0…RA CA0… RA0…RA CA0… RA0…RA CA0… ...

Page 21

Input conditions : Output conditions Output loading: Diagram 1 AC-Timing Measuring Conditions Semiconductor Group 2 0 ...

Page 22

RE t ROH t ROS SCAD SAR RA6 RA7 RA0 SAC L L CA0 RA t RRL OEA SCA SQA(0-11) Diagram 2 Read Transfer Memory to Port A Semiconductor Group ...

Page 23

RE t ROS SCAD t SAR RA6 RA7 RA0 SAC H L CA0 RB t RRL SCB Port B Diagram 3 Read Transfer Memory to Port B Semiconductor Group ROH ...

Page 24

RE t ROS SCAD t AS SAR RA6 RA7 RA0 SAC L H CA0 WT SCB t DS Port Diagram 4 Write Transfer from Port C to Memory Semiconductor Group ROH t ...

Page 25

Serial Read Operation Port SCA t CAA OEA t OAA SQA(0-11) Serial Read Operation Port SCB t CBA OEB t OBA Port B Serial Write Operation Port SCB Port C Diagram ...

Page 26

RE t ROS SCAD SAC H H Diagram 6a Refresh with Internal Row Address Semiconductor Group ROH SDA 9254 UED08620 1998-01-16 ...

Page 27

RE t ROS SCAD t AS SAR RA6 RA7 RA0 * ) * ) SAC LLH LHL * ) Mode bits arbitrary, except combination M0 = "H" and M1 = "H" Mode bits should toggle in successive cycles ...

Page 28

SCB BLN DLN OEDLO DLO t ODA Diagram 7 Timing of BLN, DLI and DLO Semiconductor Group CBH t CBA 28 SDA 9254 UET08618 1998-01-16 ...

Page 29

SC SCB SDC B1 Port B Port C t RSS Delay t RSH RB t RPW WT Diagram 8 RB, WT Timing Restrictions Semiconductor Group B10 C1 C2 ...

Page 30

Application Circuit For best performance and operation within the specified AC parameter limits it is mandatory to use separate decoupling capacitors for V shorted to on the board as shown in figure below. DD2 C Decoupling capacitors and 1 To ...

Page 31

Application Information Digital Storage Field As standard for digital TV systems, CCIR recommendation 601 defines a field of 288 lines with 720 pixels per line. The sampling frequency is 13.5 MHz with a resolution of 8 bit ...

Page 32

Package Outlines P-MQFP-64-1 (Plastic Metric Quad Flat Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 32 SDA 9254-2 Dimensions in mm 1998-01-16 ...

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