PMD5003K Philips Semiconductors (Acquired by NXP), PMD5003K Datasheet - Page 9
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PMD5003K
Manufacturer Part Number
PMD5003K
Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package.
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.PMD5003K.pdf
(15 pages)
NXP Semiconductors
8. Test information
PMD5003K_1
Product data sheet
Fig 9. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
CEsat
(V)
10
10
1
2
I
function of collector current; typical values
10
C
amb
amb
amb
/I
B
1
= 20
= 100 C
= 25 C
= 55 C
1
Fig 11. Test circuit for switching times
10
(1)
(2)
(3)
I
C
= 0.5 A; I
10
oscilloscope
2
I
006aaa907
C
(mA)
B
= 25 mA; R1 = 68 ; R2 = 300 ; R
Rev. 01 — 6 November 2006
10
V
3
(probe)
450
I
R1
Fig 10. Collector-emitter saturation voltage as a
C1
R2
V
(1) I
(2) I
(3) I
CEsat
(V)
10
10
10
1
1
2
3
10
T
function of collector current; typical values
C
C
C
amb
/I
/I
/I
(1)
(2)
(3)
B
B
B
1
D1
= 100
= 50
= 10
= 25 C
V
CC
TR1
C
R C
= 18 ; C1 = 2.2 nF
1
DUT
V
O
(probe)
10
3 k
PMD5003K
oscilloscope
006aaa896
10
© NXP B.V. 2006. All rights reserved.
2
I
006aaa908
C
MOSFET driver
(mA)
10
3
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