PMD5003K Philips Semiconductors (Acquired by NXP), PMD5003K Datasheet
![no-image](/images/no-image-200.jpg)
PMD5003K
Manufacturer Part Number
PMD5003K
Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package.
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.PMD5003K.pdf
(15 pages)
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
switching diode to protect the base-emitter junction in reverse direction in a SOT346
(SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package.
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
PNP transistor
V
I
I
Diode
I
V
C
CM
F
CEO
F
PMD5003K
MOSFET driver
Rev. 01 — 6 November 2006
Low V
High-speed switching diode to protect the base-emitter junction
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
Power MOSFET driver
Pulse test: t
CEsat
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
forward current
forward voltage
p
(BISS) transistor and high-speed switching diode as driver
Breakthrough In Small Signal (BISS) transistor and high-speed
300 s;
0.02.
Conditions
open base
single pulse;
t
I
p
F
= 200 mA
1 ms
[1]
Min
-
-
-
-
-
Typ
-
-
-
-
-
Product data sheet
Max
0.2
1.1
40
1
2
Unit
V
A
A
A
V