BFS505 Philips Semiconductors (Acquired by NXP), BFS505 Datasheet - Page 4

• Manufacturer Part Number: BFS505
• Description: BFS505; NPN 9 GHZ Wideband Transistor;; Package: SOT323 (UMT3, CMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
September 1995
I
h
C
C
C
f
G
F
P
ITO
j
CBO
T
S
SYMBOL
FE
L1
= 25 C, unless otherwise specified.
e
c
re
NPN 9 GHz wideband transistor
UM
21
f
G
C
p
UM
2
UM
= 900 MHz; f
= 5 mA; V
is the maximum unilateral power gain, assuming S
=
10 log
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
CE
q
= 6 V; R
------------------------------------------------------------- - dB.
= 902 MHz; measured at f
1
–
PARAMETER
S
11
L
= 50 ; f = 900 MHz; T
S
2
21
1
2
–
S
22
2
(2p q)
I
I
I
I
I
I
T
I
T
I
T
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
I
f = 900 MHz; T
note 2
E
C
C
E
C
C
C
C
C
c
amb
amb
amb
amb
s
s
s
= 5 mA; V
= 0; V
= 5 mA; V
= i
= i
= 0; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
=
=
=
c
e
amb
= 898 MHz and at f
= 25 C
= 25 C
= 25 C
= 25 C
opt
opt
opt
= 0; V
= 0; V
CB
CB
; I
; I
; I
= 25 C;
C
C
C
= 6 V
= 0.5 V; f = 1 MHz
4
CE
12
= 1.25 mA; V
= 5 mA; V
= 1.25 mA; V
amb
EB
CB
CE
CE
CE
CE
CE
CONDITIONS
is zero and
amb
amb
amb
= 6 V; R
= 0.5 V; f = 1 MHz
= 6 V; f = 1 MHz
= 6 V
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
= 25 C
= 25 C
= 25 C
= 25 C
CE
L
(2p q)
= 50 ;
= 6 V;
CE
CE
= 6 V;
= 6 V;
= 904 MHz.
60
13
MIN.
120
0.4
0.4
0.3
9
17
10
14
1.2
1.6
1.9
4
10
TYP. MAX.
Product specification
BFS505
50
250
1.7
2.1
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
UNIT