BFS505 Philips Semiconductors (Acquired by NXP), BFS505 Datasheet - Page 2

• Manufacturer Part Number: BFS505
• Description: BFS505; NPN 9 GHZ Wideband Transistor;; Package: SOT323 (UMT3, CMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
QUICK REFERENCE DATA
Note
1. T
September 1995
V
V
I
P
h
f
G
F
SYMBOL
C
T
FE
Low current consumption
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
CBO
CES
tot
NPN 9 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
PARAMETER
PINNING
PIN
1
2
3
open emitter
R
up to T
I
I
T
I
T
I
f = 900 MHz; T
base
emitter
collector
C
C
c
c
amb
amb
BE
= 5 mA; V
= 1.25 mA; V
= 5 mA; V
= 5 mA; V
= 0
Code: N0
= 25 C
= 25 C
DESCRIPTION
s
= 147 C; note 1
2
CONDITIONS
CE
CE
CE
amb
= 6 V; f = 900 MHz;
CE
= 6 V; T
= 6 V; f = 1 GHz;
= 6 V;
= 25 C
j
= 25 C
handbook, 2 columns
60
MIN.
Top view
Fig.1 SOT323.
120
9
17
1.2
Product specification
1
TYP.
3
BFS505
20
15
18
150
250
1.7
MBC870
MAX.
2
V
V
mA
mW
GHz
dB
dB
UNIT