BC636-10 Philips Semiconductors (Acquired by NXP), BC636-10 Datasheet - Page 3

• Manufacturer Part Number: BC636-10
• Description: BC636; BC638; BC640; PNP Medium Power Transistors;; Package: SOT54 (SPT, E-1)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2001 Oct 10
R
I
I
h
V
V
f
SYMBOL
SYMBOL
h
-----------
h
j
CBO
EBO
T
FE
CEsat
BE
th j-a
= 25 C unless otherwise specified.
PNP medium power transistors
FE1
FE2
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
BC636-10
BC636-16; BC638-16; BC640-16
PARAMETER
PARAMETER
I
I
I
V
I
I
I
I
E
E
C
C
C
C
C
I
CE
C
I
I
I
= 0; V
= 0; V
= 0; V
= 150 mA; V
= 500 mA; I
= 500 mA; V
= 50 mA; V
C
C
C
= 2 V; see Fig.2
= 5 mA
= 150 mA
= 500 mA
= 150 mA; V
note 1
3
CB
CB
EB
= 30 V
= 30 V; T
= 5 V
CONDITIONS
CE
B
CONDITIONS
CE
CE
= 50 mA
= 5 V; f = 100 MHz 100
CE
= 2 V; see Fig.2
= 2 V
j
= 2 V
= 150 C
BC636; BC638; BC640
63
63
40
63
100
MIN.
VALUE
150
Product specification
250
160
250
1.6
MAX.
100
10
100
0.5
1
UNIT
K/W
nA
nA
V
V
MHz
UNIT
A