BC636-10 Philips Semiconductors (Acquired by NXP), BC636-10 Datasheet - Page 2

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BC636-10

Manufacturer Part Number
BC636-10
Description
BC636; BC638; BC640; PNP Medium Power Transistors;; Package: SOT54 (SPT, E-1)
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic
package. NPN complements: BC635, BC637 and BC639.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2001 Oct 10
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
High current (max. 1 A)
Low voltage (max. 80 V).
Audio and video amplifiers.
CBO
CEO
EBO
tot
PNP medium power transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BC636
BC638
BC640
BC636
BC638
BC640
PARAMETER
open emitter
open base
open collector
T
amb
2
25 C; note 1
CONDITIONS
PINNING
handbook, halfpage
Fig.1
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
3
base
collector
emitter
BC636; BC638; BC640
65
65
MIN.
DESCRIPTION
Product specification
0.83
+150
150
+150
MAM285
45
60
100
45
60
80
5
1
1.5
200
MAX.
1
V
V
V
V
V
V
V
A
A
mA
W
C
C
C
UNIT
2
3

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