BSP315 Infineon Technologies Corporation, BSP315 Datasheet - Page 7

• Manufacturer Part Number: BSP315
• Description: Sipmos Small-signal Transistor
• Manufacturer: Infineon Technologies Corporation

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Semiconductor Group
C
DS (on)
DS (on)
10
10
10
10
2.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
pF
-60
4
3
2
1
0
DS
= ( T
)
D
-5
j
GS
)
= -1.1 A, V
-20
=0V, f = 1 MHz
-10
20
-15
GS
98%
typ
-20
= -10 V
60
-25
100
-30
T
°C
V
V
j
C
C
C
DS
iss
oss
rss
160
-40
7
Gate threshold voltage
V
parameter: V
V
Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
I
GS (th)
F
= ( V
-10
-10
-10
-10
-4.6
-4.0
-3.6
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
A
V
-1
-2
-60
0.0
SD
1
0
= ( T
)
-0.4
j
j
GS
, t
)
-20
p
= V
= 80 µs
-0.8
DS
20
-1.2
, I
T
T
T
T
D
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
98%
typ
2%
= -1 mA
-1.6
60
-2.0
100
-2.4
Sep-12-1996
BSP 315
T
V
°C
j
SD
V
-3.0
160