BSP315 Infineon Technologies Corporation, BSP315 Datasheet - Page 2

• Manufacturer Part Number: BSP315
• Description: Sipmos Small-signal Transistor
• Manufacturer: Infineon Technologies Corporation

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
Electrical Characteristics, at T
Semiconductor Group
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
GS
GS =
DS
DS
DS
GS
GS
= -50 V, V
= -50 V, V
= -30 V, V
= 0 V, I
= -20 V, V
= -10 V, I
V
DS,
I
D
D
= -1 mA
= -0.25 mA, T
D
GS
GS
GS
DS
= -1.1 A
= 0 V, T
= 0 V, T
= 0 V, T
= 0 V
j
j
j
= 25 °C
= 125 °C
= 25 °C
j
= 25 °C
j
= 25°C, unless otherwise specified
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
1)
2
copper area for drain connection
Symbol
T
T
R
R
j
stg
thJA
thJS
min.
-
-
-
-
-
-50
-0.8
Values
typ.
-
-
-1.1
-0.1
-10
-10
0.65
-55 ... + 150
-55 ... + 150
55 / 150 / 56
Values
E
70
10
max.
-
-2
-1
-100
-100
-100
0.8
Sep-12-1996
BSP 315
Unit
°C
K/W
Unit
V
µA
nA
nA