BSP145 Philips Semiconductors (Acquired by NXP), BSP145 Datasheet - Page 3

• Manufacturer Part Number: BSP145
• Description: N-channel Enhancement Mode Vertical D-mos Transistor: 450v, 250ma
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Device mounted on an epoxy printed-circuit board, 40
CHARACTERISTICS
T
1995 Apr 24
V
V
I
I
P
T
T
R
V
V
I
I
R
C
C
C
Switching times (see Figs 2 and 3)
t
t
D
DM
j
DSS
GSS
on
off
SYMBOL
SYMBOL
SYMBOL
y
stg
j
DS
GSO
tot
(BR)DSS
GSth
th j-a
= 25 C unless otherwise specified.
DSon
iss
oss
rss
N-channel enhancement mode
vertical D-MOS transistor
fs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to ambient
PARAMETER
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
V
V
I
V
I
D
D
GS
DS
GS
DS
GS
DS
GS
GS
GS
GS
GS
= 100 mA
= 100 mA
= V
= 0; V
= 10 V; I
= 25 V; I
= 0; V
= 0; V
= 0; V
= 0 to 10 V; V
= 10 to 0 V; V
= 0; I
= 0; V
3
GS
40
open drain
up to T
note 1
CONDITIONS
D
GS
DS
DS
DS
; I
DS
= 10 A
D
D
D
= 25 V; f = 1 MHz
= 25 V; f = 1 MHz
= 25 V; f = 1 MHz
= 350 V
= 20 V
1.5 mm; mounting pad for drain lead minimum 6 cm
= 1 mA
=250 mA
= 100 mA
amb
CONDITIONS
CONDITIONS
DD
DD
= 25 C; note 1
= 200 V;
=200 V;
450
2
200
MIN.
3
10
90
25
2
MIN.
TYP.
65
VALUE
83.3
Product specification
450
250
1
1.5
+150
150
4
1
14
120
35
5
10
100
MAX.
MAX.
20
BSP145
100
UNIT
K/W
V
V
mA
A
W
V
V
nA
mS
pF
pF
pF
ns
ns
UNIT
C
C
UNIT
A
2
.