BSP145 Philips Semiconductors (Acquired by NXP), BSP145 Datasheet - Page 2

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BSP145

Manufacturer Part Number
BSP145
Description
N-channel Enhancement Mode Vertical D-mos Transistor: 450v, 250ma
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
PINNING - SOT223
QUICK REFERENCE DATA
1995 Apr 24
V
V
V
I
R
P
D
SYMBOL
Direct interface to C-MOS, TTL, etc.
High speed switching
No secondary breakdown.
Intended for applications in relay, high speed and line
transformer drivers.
DS
GSO
GSth
tot
DSon
N-channel enhancement mode
vertical D-MOS transistor
PIN
1
2
3
4
drain-source voltage
gate-source voltage
gate-source threshold voltage
drain current
drain-source on-state resistance
total power dissipation
SYMBOL
g
d
s
d
PARAMETER
gate
drain
source
drain
DESCRIPTION
open drain
I
I
up to T
2
D
D
= 1 mA; V
= 100 mA; V
handbook, halfpage
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
CONDITIONS
amb
= 25 C
DS
Top view
Fig.1 Simplified outline and symbol.
GS
= V
1
= 10 V
GS
2
4
CAUTION
3
3
10
TYP.
MAM054
g
Product specification
450
4
250
14
1.5
20
MAX.
BSP145
d
s
V
V
V
mA
W
UNIT

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