BSP090 Philips Semiconductors (Acquired by NXP), BSP090 Datasheet - Page 8

• Manufacturer Part Number: BSP090
• Description: P-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
1997 Mar 13
handbook, halfpage
handbook, halfpage
P-channel enhancement mode vertical
D-MOS transistor
V
(1) T
(2) T
(3) T
Fig.10 Source current as a function of source-drain
V
Fig.12 Temperature coefficient of gate-source
k
GD
GSth
=
(A)
I S
1.2
k
1.1
1.0
0.9
0.8
0.7
= 0.
16
12
------------------------------------- -
V
amb
amb
amb
at V
8
4
0
V
GSth
75
0
GSth
= 25 C; t
= 65 C; t
= 150 C; t
DS
diode forward voltage; typical values.
threshold voltage as a function of junction
temperature; typical values.
at 25 C
= V
at T
GS
j
0.5
25
; I
p
p
= 80 s;
p
D
= 80 s;
= 80 s;
= 1 mA.
1.0
25
= 0.
= 0.
= 0.
(1)
75
1.5
(2) (3)
125
2.0
V SD (V)
T j ( C)
MGD733
MGD735
175
2.5
8
handbook, halfpage
handbook, halfpage
R DSon
T
V
Fig.11 Drain-source on-state resistance as a
(1) R
(2) R
Fig.13 Temperature coefficient of drain-source
k
(m )
amb
DS
=
10
10
1.8
1.4
1.0
0.6
---------------------------------------- -
R
10
= 25 C; t
k
DSon
DSon
I
3
2
DSon
D
R
75
0
DSon
function of gate-source voltage;
typical values.
on-resistance as a function of junction
temperature; typical values.
R
at V
at V
at 25 C
DSon
at T
p
GS
GS
= 80 s;
.
= 10 V; I
= 4.5 V; I
25
j
2
= 0.
D
25
D
4
= 2.8 A.
= 1.4 A.
75
6
I D =
100 mA
500 mA
1.4 A
2.8 A
5.5 A
10 A
15 A
22 A
Product specification
125
8
(1)
(2)
V GS (V)
T j ( C)
BSP090
MGD734
MGD736
175
10