BSP090 Philips Semiconductors (Acquired by NXP), BSP090 Datasheet - Page 3

• Manufacturer Part Number: BSP090
• Description: P-channel Enhancement Mode Vertical D-mos Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. T
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a R
4. Device mounted on a printed-circuit board with a R
THERMAL CHARACTERISTICS
1997 Mar 13
V
V
I
I
P
T
T
Source-drain diode
I
I
R
SYMBOL
SYMBOL
D
DM
S
SM
stg
j
DS
GS
tot
th j-s
P-channel enhancement mode vertical
D-MOS transistor
s
is the temperature at the soldering point of the drain lead.
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source current (DC)
peak pulsed source current
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
th a-tp
th a-tp
3
(ambient to tie-point) of 27.5 K/W.
(ambient to tie-point) of 90 K/W.
T
note 2
T
T
T
T
note 2
s
s
amb
amb
s
= 100 C; note 1
= 100 C
= 100 C
= 25 C; note 3
= 25 C; note 4
CONDITIONS
65
65
MIN.
VALUE
10
Product specification
5
3.3
1.25
+150
+150
30
20
5.7
22
3.8
15
MAX.
BSP090
UNIT
K/W
V
V
A
A
W
W
W
A
A
C
C
UNIT