STB80NF55-06 ST Microelectronics, Inc., STB80NF55-06 Datasheet - Page 3

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STB80NF55-06

Manufacturer Part Number
STB80NF55-06
Description
N-channel 55V - 0.005 Ohm - 80A TO-220/TO-220FP/D2PAK StripFET ii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area for TO-220
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
Q
d(on)
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 80 A
= 80 A
= 44 V I
= 27 V
= 27 V
= 35 V
= 4.7
STB80NF55-06 STP80NF55-06 STP80NF55-06FP
Test Conditions
Test Conditions
Test Conditions
D
= 80 A V
Safe Operating Area for TO-220FP
di/dt = 100A/µs
V
V
V
T
GS
GS
GS
j
I
I
= 150°C
D
D
GS
= 0
= 10 V
= 40 A
= 10 V
= 40 A
= 10V
Min.
Min.
Min.
Typ.
60.5
Typ.
Typ.
0.32
155
142
125
100
6.5
27
29
65
Max.
Max.
Max.
320
193
1.5
80
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
C
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