STB80NF55-06 ST Microelectronics, Inc., STB80NF55-06 Datasheet

no-image

STB80NF55-06

Manufacturer Part Number
STB80NF55-06
Description
N-channel 55V - 0.005 Ohm - 80A TO-220/TO-220FP/D2PAK StripFET ii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB80NF55-06
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB80NF55-06
Manufacturer:
ST
0
Part Number:
STB80NF55-06-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB80NF55-06-1
Manufacturer:
ST
0
Part Number:
STB80NF55-06T
Manufacturer:
ST
0
Part Number:
STB80NF55-06T4
Manufacturer:
ST
0
Part Number:
STB80NF55-06TR
Manufacturer:
ST
0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
January 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55-06 @ B80NF55-06 @ P80NF55-06 @
STB80NF55-06
STP80NF55-06
STP80NF55-06FP
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING D
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT
Pulse width limited by safe operating area.
Symbol
dv/dt
E
I
V
DM
V
V
V
P
AS (2)
T
N-CHANNEL 55V - 0.005
DGR
I
I
T
ISO
GS
stg
DS
D
D
tot
TYPE
(
j
(1)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
DS
(on) = 0.005
V
55 V
55 V
55 V
DSS
Parameter
2
PAK (TO-263)
<0.0065
<0.0065
<0.0065
R
C
DS(on)
GS
= 25°C
STP80NF55-06 STP80NF55-06FP
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
80 A
80 A
60 A
I
D
STripFET™ II POWER MOSFET
- 80A TO-220/TO-220FP/D
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
STB80NF55-06
STP80NF55-06
SD
TO-220FP
------
320
300
80
80
80A, di/dt 400A/µs, V
2
j
= 25
-55 to 175
1
o
Value
C, I
2
± 20
1.3
55
55
3
7
D
STB80NF55-06
= 40A, V
STP80NF55-06FP
TO-220
DD
2500
DD
0.30
240
60
42
45
V
= 35V
(BR)DSS
1
2
3
, T
j
(Suffix “T4”)
TO-263
D
T
JMAX
2
PAK
2
W/°C
V/ns
1
Unit
PAK
°C
W
V
V
V
A
A
A
V
J
3
1/11

Related parts for STB80NF55-06

STB80NF55-06 Summary of contents

Page 1

... R I DS(on) D <0.0065 80 A <0.0065 80 A <0.0065 60 A TO-220FP INTERNAL SCHEMATIC DIAGRAM STB80NF55-06 STP80NF55- 25° 100° 25° (2) Starting T STB80NF55- TO-220 Value STP80NF55-06FP 55 55 ± 320 240 300 45 2 0.30 7 1.3 ------ 2500 -55 to 175 80A, di/dt 400A/µ ...

Page 2

... STB80NF55-06 STP80NF55-06 STP80NF55-06FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ...

Page 3

... Reverse Recovery Time rr Q Reverse Recovery Charge rr Reverse Recovery Current I RRM (*) Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. Safe Operating Area for TO-220 STB80NF55-06 STP80NF55-06 STP80NF55-06FP Test Conditions 4 ...

Page 4

... STB80NF55-06 STP80NF55-06 STP80NF55-06FP Thermal Impedance Output Characteristics Transconductance 4/11 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STB80NF55-06 STP80NF55-06 STP80NF55-06FP Capacitance Variations Normalized on Resistance vs Temperature Normalized Breakdown Voltage Temperature 5/11 ...

Page 6

... STB80NF55-06 STP80NF55-06 STP80NF55-06FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... DIM. MIN. TYP. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 8 1.27 L3 1 0° STB80NF55-06 STP80NF55-06 STP80NF55-06FP 2 D PAK MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 5.28 0.192 15.85 0.591 1.4 0.050 1.75 0.055 3.2 0.094 0.4 8° inch. TYP. TYP. ...

Page 8

... STB80NF55-06 STP80NF55-06 STP80NF55-06FP DIM. MIN. A 4.4 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4. 2.65 L6 15.25 L7 6.20 L9 3.50 DIA 3.75 8/11 TO-220 MECHANICAL DATA mm. TYP. MAX. 4.6 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.70 0.094 10.40 0.393 16.40 28.90 14 0.511 2.95 0.104 15.75 0.600 6.60 0.244 3.93 0.137 3.85 0.147 inch. MIN. TYP. 0.645 1.137 TYP ...

Page 9

... TO-220FP MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ STB80NF55-06 STP80NF55-06 STP80NF55-06FP mm MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 inch TYP. MAX. ...

Page 10

... STB80NF55-06 STP80NF55-06 STP80NF55-06FP 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4.1 0.153 P1 11.9 12.1 0.468 P2 1.9 2.1 0075 R 50 1.574 T 0.25 0.35 .0.0098 W 23.7 24.3 0.933 * on sales type 10/11 TUBE SHIPMENT (no suffix)* inch MAX. ...

Page 11

... STMicroelectronics. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. STB80NF55-06 STP80NF55-06 STP80NF55-06FP The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners ...

Related keywords