HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet - Page 21

• Manufacturer Part Number: HY27UF082G2M
• Description: (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.3 / Aug. 2005
Input / Output Capacitance
Input Capacitance
Program Time
Dummy Busy Time for Cache Program
Dummy Busy Time for Cache Read
Dummy Busy Time for the Lock or Lock-tight Block
Number of partial Program Cycles in the same page
Block Erase Time
Item
Table 12: Program / Erase Characteristics
Table 11: Pin Capacitance (TA=25℃, F=1.0MHz)
Parameter
Symbol
C
C
I/O
IN
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
Spare Array
Main Array
Test Condition
V
V
IN
IL
=0V
=0V
Symbol
HY27UF(08/16)2G2M Series
t
t
t
t
t
NOP
NOP
PROG
CBSY
RBSY
BERS
LBSY
Min
Min
-
-
-
-
-
-
-
-
-
Typ
200
3
5
5
2
-
-
Max
10
10
Preliminary
Max
700
700
10
4
4
3
-
Unit
Cycles
Cycles
pF
pF
Unit
ms
us
us
us
us
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