HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet - Page 2

• Manufacturer Part Number: HY27UF082G2M
• Description: (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Revision History
Rev 0.3 / Aug. 2005
Revision
No.
0.2
0.3
7) Change AC characteristics
8) Delete the errata.
9) Correct Address Cycle Map.
1) Delete the 1.8V device’s features.
2) Change DC characteristics (Table 9)
- Operating Current
3) Correct PKG dimension (TSOP PKG)
Before
Before
Before
After
After
After
tWH
20
Typ
20
15
15
(4)
0.050
0.100
I
CC1
CP
Max
40
30
25
30
tR
tREA tOH tREH
Typ
20
15
35
30
I
CC2
Max
40
30
History
15
10
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
Typ
20
15
20
15
I
CC3
Max
40
30
HY27UF(08/16)2G2M Series
Aug. 09. 2005
Aug. 19. 2005
Draft Date
Preliminary
-Continued-
Preliminary
Preliminary
Remark
2