SMG1333 SeCoS Halbleitertechnologie, SMG1333 Datasheet - Page 3
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SMG1333
Manufacturer Part Number
SMG1333
Description
P-channel Enhancement Mode Power Mos.fet
Manufacturer
SeCoS Halbleitertechnologie
Datasheet
1.SMG1333.pdf
(4 pages)
SMG1333
-550mA, -20V,R
800m
Ω
DS(ON)
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 3. On-Resistance v.s. Gate Voltage
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Page 3 of 4
01-Jun-2002 Rev. A