BGA427E6327 Infineon Technologies Corporation, BGA427E6327 Datasheet - Page 3

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BGA427E6327

Manufacturer Part Number
BGA427E6327
Description
Si-mmic-amplifier in Sieget 25-technologie
Manufacturer
Infineon Technologies Corporation
Datasheet

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S-Parameters at T
f
GHz
V
0.1
0.2
0.5
0.8
0.9
1
1.5
1.8
1.9
2
2.5
3
IN
Spice-model BGA 427
D
= 3V, Z
BGA 427-chip
including parasitics
11
S
MAG
0.1382
0.1179
0.1697
0.1824
0.1782
0.1827
0.1969
0.2021
0.2116
0.2437
0.176
0.258
R
11
C
1
o
P1
= 50
C
C
1
P2

ANG
-133.5
-156.1
-162.8
-167.7
172.8
153.3
R
A
-38.3
-20.8
-56.9
-69.1
-80.6
3
-16
= 25 °C, (Testfixture, Appl.1)
+V
T1
13
12
R
C’-E’-
Diode
GND
2
MAG
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
C
P3
C
S
P4
21
ANG
164.9
158.9
135.2
115.4
109.4
84.9
74.7
72.3
104
77
63
55
C
P5
EHA07381
3
T2
R
14
4
MAG
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
OUT
S
T1
T2
R
R
R
R
C
C
C
C
C
C
C'-E'-diode T1
12
1
2
3
4
1
P1
P2
P3
P4
P5
ANG
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
MAG
0.6435
0.6278
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
T501
T501
14.5k
280
2.4k
170
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
0.1pF
0.54




Aug-02-2001
S
22
BGA427
ANG
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131

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