BGA427E6327 Infineon Technologies Corporation, BGA427E6327 Datasheet - Page 2

• Manufacturer Part Number: BGA427E6327
• Description: Si-mmic-amplifier in Sieget 25-technologie
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
AC characteristics V
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Reverse isolation
f = 1.8 GHz
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Intercept point at the output
f = 1.8 GHz
Return loss input
f = 1.8 GHz
Return loss output
f = 1.8 GHz
Typical configuration
Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device
Appl.1
RF OUT
RF IN
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
to provide a low impedance path (appl.1).
boards are recommended to minimize the parasitic inductance to ground.
100 pF
100 pF
D
BGA 427
= 3 V, Z
GND
+V
A
o
EHA07379
= 25 °C, unless otherwise specified.
= 50
1 nF


, Testfixture Appl.1
Appl.2
RF IN
2
Symbol
|S
S12
NF
IP
RL
RL
100 pF
2.2 pF
21
3out
in
out
|
2
BGA 427
GND
+V
min.
-
-
-
-
-
-
-
-
-
-
100 nH
100 pF
Values
18.5
typ.
+ 7
>12
1.9
2.2
27
22
22
>9
2
10 nF
max.
Aug-02-2001
RF OUT
EHA07380
-
-
-
-
-
-
-
-
-
-
100 pF
BGA427
Unit
dB
dBm
dB