CEM8968 Chino-Excel Technology Corp., CEM8968 Datasheet - Page 3

• Manufacturer Part Number: CEM8968
• Description: Dual Enhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: Chino-Excel Technology Corp.

P-Channel Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
d
d
b
c
R
Symbol
V
BV
t
t
V
Q
I
GS(th)
DS(on)
g
C
C
C
d(on)
d(off)
Q
I
I
GSSF
Q
GSSR
I
t
DSS
t
SD
FS
iss
oss
rss
gd
S
r
f
gs
g
DSS
3
T
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
A
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 25 C unless otherwise noted
Test Condition
= 0V, I
= -30V, V
= 20V, V
= -20V, V
= V
= -10V, I
= -4.5V, I
= -10V, I
= -15V, V
= -15V, I
= -10V, R
= -15V, I
= -10V
= 0V, I
DS
, I
D
S
D
= -250 µ A
= -1A
D
D
D
D
D
DS
GS
DS
GS
GEN
= -250 µ A
= -6.2A
= -5.3A,
= -6.2A
= -1A,
= -4A
= 0V
= 0V
= 0V
= 0V,
= 6Ω
Min
-30
-1
CEM8968
1140
18.7
Typ
240
140
3.7
2.3
27
40
12
57
21
9
5
Max
-100
24.8
114
-6.2
-1.2
100
33
52
24
10
42
-1
-3
Units
mΩ
mΩ
nA
nA
nC
nC
nC
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V