CEM8968 Chino-Excel Technology Corp., CEM8968 Datasheet - Page 2

• Manufacturer Part Number: CEM8968
• Description: Dual Enhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: Chino-Excel Technology Corp.

N-Channel Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
d
d
b
c
R
Symbol
V
BV
t
t
g
C
C
C
V
Q
I
GS(th)
DS(on)
d(on)
d(off)
Q
I
I
GSSF
Q
GSSR
I
FS
t
DSS
t
SD
iss
oss
rss
gd
S
r
f
gs
g
DSS
2
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
A
Test Condition
= 25 C unless otherwise noted
= 10V, R
= 0V, I
= 24V, V
= 20V, V
= -20V, V
= V
= 10V, I
= 4.5V, I
= 5V, I
= 15V, V
= 15V, I
= 15V, I
= 10V
= 0V, I
DS
, I
D
D
S
D
D
D
D
= 250 µ A
= 7A
GEN
= 1.3A
D
GS
GS
DS
DS
=5.8A,
= 250 µ A
= 7A
= 1A,
= 6A
= 0V,
= 0V
= 0V
= 0V
=2.7Ω
Min
30
1
CEM8968
Typ
600
140
1.3
2.3
22
30
25
90
25
12
8
5
5
Max
-100
15.9
100
1.2
28
40
16
10
50
10
1
3
7
Units
mΩ
mΩ
nA
nA
nC
nC
nC
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V