SI7812DN Vishay Siliconix, SI7812DN Datasheet - Page 2

• Manufacturer Part Number: SI7812DN
• Description: N-Channel 75-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si7812DN
Vishay Siliconix
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
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2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
J
a, b
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
DS
g
Q
R
oss
t
t
t
t
DS
rss
iss
fs
gs
gd
r
f
r
f
g
g
/T
/T
J
Steady State
J
t ≤ 10 s
V
V
I
V
I
V
D
D
DS
DS
DS
DS
≅ 5.7 A, V
≅ 5.7 A, V
= 38 V, V
= 38 V, V
V
= 75 V, V
V
= 35 V, V
V
V
V
V
V
V
V
V
V
DS
DS
GS
DD
DD
GS
DS
DS
GS
DS
DS
Test Conditions
= 0 V, V
= V
= 38 V, R
= 38 V, R
= 0 V, I
= 4.5 V, I
= 75 V, V
≥ 5 V, V
= V
= 10 V, I
= 15 V, I
I
D
f = 1 MHz
GEN
GEN
GS
GS
= 250 µA
GS
GS
Symbol
GS
GS
R
R
, I
= 4.5 V, I
, I
= 10 V, I
= 0 V, T
= 4.5 V, R
thJA
thJC
D
GS
= 0 V, f = 1 MHz
= 10 V, R
D
GS
D
D
D
= 250 µA
D
L
L
= 250 µA
GS
= 5 mA
= ± 20 V
= 7.2 A
= 7.2 A
= 6.4 A
= 6.7 Ω
= 6.7 Ω
= 10 V
= 0 V
J
D
D
= 55 °C
g
= 7.2 A
g
= 7.2 A
= 1 Ω
= 1 Ω
Typical
1.9
26
Min.
1.0
75
25
Maximum
0.031
0.038
Typ.
- 6.4
S-83050-Rev. D, 29-Dec-08
2.4
840
110
130
33
2.0
2.3
2.8
3.6
65
23
50
16
20
20
50
15
20
35
10
8
1
Document Number: 73332
± 100
0.037
0.046
Max.
200
3.0
10
24
12
30
30
75
25
30
40
15
1
°C/W
Unit
mV/°C
Unit
nC
nA
µA
pF
ns
V
V
A
Ω
S
Ω
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